| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
The question interval is too short.
Please try again in a few seconds.
Hello, Please ask a question about IXTT52N30P_V01 Datasheet
# Example questions:
➢ Examine figure 1 and figure how do the output characteristics (vds vs. id) change when the junction temperature changes from 25°c to 125°c?
➢ What generally happens to the maximum drain current as the case temperature increases?
➢ How does the rds(on) change as the drain current (id) increases?
| Part No. | IXTT52N30P_V01 |
| Manufacturer | IXYS |
| Size | 146 Kbytes |
| Pages | 6 pages |
| Description | N-Channel Enhancement Mode Power MOSFETs |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |