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# Example questions:
➢ What is the maximum collector current (ic) specified in the absolute maximum ratings?
➢ How does the gain bandwidth product change as the collector current increases (assuming vce = 3v)?
➢ What are the units for the 'cre' parameter listed in the electrical characteristics table, and what does it represent?
1. Product Identification
️· Part Number: NE688M23
️· EIAJ1 Registered Number: 2SC5651
️· Package Outline: M23
️· Manufacturer: California Eastern Laboratories (CEL)
2. Absolute Maximum Ratings (Operating Limits - Exceeding these can cause permanent damage)
| Parameter | Unit | Rating |
|---|---|---|
| VCBO (Collector-Base Voltage) | V | 9 |
| VCEO (Collector-Emitter Voltage) | V | 6 |
| VEBO (Emitter-Base Voltage) | V | 2 |
| IC (Collector Current) | mA | 100 |
| PT (Total Power Dissipation) | mW | TBD (To Be Determined) |
| TJ (Junction Temperature) | °C | 150 |
| TSTG (Storage Temperature) | °C | -65 to +150 |
| Symbol | Parameter/Condition | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| fT | Gain Bandwidth (VCE=1V, IC=3mA, f=2GHz) | GHz | 4 | 5 | - |
| NF | Noise Figure (VCE=1V, IC=3mA, f=2GHz) | dB | - | 1.9 | 2.5 |
| S21E | Insertion Power Gain (VCE=1V, IC=3mA, f=2GHz) | dB | 3 | 4 | - |
| hFE2 | DC Current Gain (VCE=1V, IC=3mA) | - | 80 | - | 145 |
| ICBO | Collector Cutoff Current | µA | - | - | 0.1 |
| IEBO | Emitter Cutoff Current | µA | - | - | 0.1 |
| CRE3 | Feedback Capacitance | pF | - | 0.7 | 0.8 |
1. Product Identification
️· Part Number: NE688M23
️· EIAJ1 Registered Number: 2SC5651
️· Package Outline: M23
️· Manufacturer: California Eastern Laboratories (CEL)
2. Absolute Maximum Ratings (Operating Limits - Exceeding these can cause permanent damage)
| Parameter | Unit | Rating |
|---|---|---|
| VCBO (Collector-Base Voltage) | V | 9 |
| VCEO (Collector-Emitter Voltage) | V | 6 |
| VEBO (Emitter-Base Voltage) | V | 2 |
| IC (Collector Current) | mA | 100 |
| PT (Total Power Dissipation) | mW | TBD (To Be Determined) |
| TJ (Junction Temperature) | °C | 150 |
| TSTG (Storage Temperature) | °C | -65 to +150 |
| Symbol | Parameter/Condition | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| fT | Gain Bandwidth (VCE=1V, IC=3mA, f=2GHz) | GHz | 4 | 5 | - |
| NF | Noise Figure (VCE=1V, IC=3mA, f=2GHz) | dB | - | 1.9 | 2.5 |
| S21E | Insertion Power Gain (VCE=1V, IC=3mA, f=2GHz) | dB | 3 | 4 | - |
| hFE2 | DC Current Gain (VCE=1V, IC=3mA) | - | 80 | - | 145 |
| ICBO | Collector Cutoff Current | µA | - | - | 0.1 |
| IEBO | Emitter Cutoff Current | µA | - | - | 0.1 |
| CRE3 | Feedback Capacitance | pF | - | 0.7 | 0.8 |
| Part No. | NE688M23 |
| Manufacturer | NEC |
| Size | 19 Kbytes |
| Pages | 2 pages |
| Description | NPN SILICON TRANSISTOR |
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