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NE688M23 Datasheet with Chat AI
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  • # Example questions: ➢ What is the maximum collector current (ic) specified in the absolute maximum ratings?
    ➢ How does the gain bandwidth product change as the collector current increases (assuming vce = 3v)?
    ➢ What are the units for the 'cre' parameter listed in the electrical characteristics table, and what does it represent?

  • Part No.NE688M23
    ManufacturerNEC
    Size19 Kbytes
    Pages2 pages
    DescriptionNPN SILICON TRANSISTOR
    Datasheet Summary with AI

    1. Product Identification

    ️· Part Number: NE688M23
    ️· EIAJ1 Registered Number: 2SC5651
    ️· Package Outline: M23
    ️· Manufacturer: California Eastern Laboratories (CEL)

    2. Absolute Maximum Ratings (Operating Limits - Exceeding these can cause permanent damage)

    Parameter Unit Rating
    VCBO (Collector-Base Voltage) V 9
    VCEO (Collector-Emitter Voltage) V 6
    VEBO (Emitter-Base Voltage) V 2
    IC (Collector Current) mA 100
    PT (Total Power Dissipation) mW TBD (To Be Determined)
    TJ (Junction Temperature) °C 150
    TSTG (Storage Temperature) °C -65 to +150

    3. Electrical Characteristics (Typical Performance - These represent typical values, not guaranteed minimums or maximums)

    Symbol Parameter/Condition Unit Min Typ Max
    fT Gain Bandwidth (VCE=1V, IC=3mA, f=2GHz) GHz 4 5 -
    NF Noise Figure (VCE=1V, IC=3mA, f=2GHz) dB - 1.9 2.5
    S21E Insertion Power Gain (VCE=1V, IC=3mA, f=2GHz) dB 3 4 -
    hFE2 DC Current Gain (VCE=1V, IC=3mA) - 80 - 145
    ICBO Collector Cutoff Current µA - - 0.1
    IEBO Emitter Cutoff Current µA - - 0.1
    CRE3 Feedback Capacitance pF - 0.7 0.8

    4. Typical Performance Curves (Illustrative Data - These show how the device behaves under various conditions)

    ️· Collector Current vs. Collector-Emitter Voltage (VCE): Shows the current flow for different VCE values.
    ️· Collector Current vs. Base-Emitter Voltage (VBE): Shows the current flow for different VBE values.
    ️· DC Current Gain (hFE) vs. Collector Current (IC): Shows how gain changes with current.
    ️· Noise Figure (NF) / Associated Gain vs. Collector Current (IC): Illustrates the relationship between noise performance and current.
    ️· Gain-Bandwidth Product (fT) vs. Collector Current (IC): Illustrates how frequency response changes with current.

    5. Contact Information:

    ️· California Eastern Laboratories (CEL)
    ️· Address: 4590 Patrick Henry Drive, Santa Clara, CA 95054-1817
    ️· Phone: (408) 988-3500
    ️· Fax: (408) 988-0279
    ️· Website: [http://WWW.CEL.COM](http://WWW.CEL.COM)

    Key Takeaways

    ️· The NE688M23 is a transistor designed for RF and microwave applications.
    ️· It’s a versatile part, as evidenced by the various performance curves showing its behavior under different operating conditions.
    ️· Refer to the "Absolute Maximum Ratings" carefully to avoid damaging the device.
    ️· The "Typical Performance Curves" provide valuable insight into the part's functionality and allow for optimized circuit design.

    1. Product Identification

    ️· Part Number: NE688M23
    ️· EIAJ1 Registered Number: 2SC5651
    ️· Package Outline: M23
    ️· Manufacturer: California Eastern Laboratories (CEL)

    2. Absolute Maximum Ratings (Operating Limits - Exceeding these can cause permanent damage)

    Parameter Unit Rating
    VCBO (Collector-Base Voltage) V 9
    VCEO (Collector-Emitter Voltage) V 6
    VEBO (Emitter-Base Voltage) V 2
    IC (Collector Current) mA 100
    PT (Total Power Dissipation) mW TBD (To Be Determined)
    TJ (Junction Temperature) °C 150
    TSTG (Storage Temperature) °C -65 to +150

    3. Electrical Characteristics (Typical Performance - These represent typical values, not guaranteed minimums or maximums)

    Symbol Parameter/Condition Unit Min Typ Max
    fT Gain Bandwidth (VCE=1V, IC=3mA, f=2GHz) GHz 4 5 -
    NF Noise Figure (VCE=1V, IC=3mA, f=2GHz) dB - 1.9 2.5
    S21E Insertion Power Gain (VCE=1V, IC=3mA, f=2GHz) dB 3 4 -
    hFE2 DC Current Gain (VCE=1V, IC=3mA) - 80 - 145
    ICBO Collector Cutoff Current µA - - 0.1
    IEBO Emitter Cutoff Current µA - - 0.1
    CRE3 Feedback Capacitance pF - 0.7 0.8

    4. Typical Performance Curves (Illustrative Data - These show how the device behaves under various conditions)

    ️· Collector Current vs. Collector-Emitter Voltage (VCE): Shows the current flow for different VCE values.
    ️· Collector Current vs. Base-Emitter Voltage (VBE): Shows the current flow for different VBE values.
    ️· DC Current Gain (hFE) vs. Collector Current (IC): Shows how gain changes with current.
    ️· Noise Figure (NF) / Associated Gain vs. Collector Current (IC): Illustrates the relationship between noise performance and current.
    ️· Gain-Bandwidth Product (fT) vs. Collector Current (IC): Illustrates how frequency response changes with current.

    5. Contact Information:

    ️· California Eastern Laboratories (CEL)
    ️· Address: 4590 Patrick Henry Drive, Santa Clara, CA 95054-1817
    ️· Phone: (408) 988-3500
    ️· Fax: (408) 988-0279
    ️· Website: [http://WWW.CEL.COM](http://WWW.CEL.COM)

    Key Takeaways

    ️· The NE688M23 is a transistor designed for RF and microwave applications.
    ️· It’s a versatile part, as evidenced by the various performance curves showing its behavior under different operating conditions.
    ️· Refer to the "Absolute Maximum Ratings" carefully to avoid damaging the device.
    ️· The "Typical Performance Curves" provide valuable insight into the part's functionality and allow for optimized circuit design.

    Part No.NE688M23
    ManufacturerNEC
    Size19 Kbytes
    Pages2 pages
    DescriptionNPN SILICON TRANSISTOR
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