# IXTH90N15T N-Channel MOSFET Transistor

## Features

· RDS(on) ≤ 20mΩ @ VGS = 10V
· Fully characterized avalanche voltage and current
· 100% avalanche tested
· Designed for robust device performance and reliable operation

## Absolute Maximum Ratings (Ta = 25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	150	V
VGS	Gate-Source Voltage	±30	V
ID	Drain Current-Continuous	90	A
IDM	Drain Current-Single Pulsed	250	A
PD	Total Dissipation @ TC=25℃	455	W
Tj	Operating Junction Temperature	-55~175	℃
Tstg	Storage Temperature	-55~175	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth(j-c)	Junction-to-case thermal resistance	0.33	℃/W

## Electrical Characteristics (TC=25℃)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
BVDSS	Drain-Source Breakdown Voltage	VGS= 0V; ID = 250μA	150		V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID = 1mA	2.5	4.5	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID= 45A		20	mΩ
IGSS	Gate-Source Leakage Current	VGS= ±20V;VDS=0V		±200	nA
IDSS	Drain-Source Leakage Current	VDS= VDSS; VGS= 0V		5	μA
VSD	Diode forward voltage	IF= 50A; VGS = 0V		1.2	V

## Application

· DC/DC Converters
· High Speed Power Switching Applications

## Notice

· ISC website: [www.iscsemi.cn](http://www.iscsemi.cn)
· Not designed for hazardous environments, aerospace, or medical applications. Contact ISC for specialized applications.
· ISC disclaims any liability arising from product use.