# isc N-Channel MOSFET Transistor IXFK24N100F

## Features

· Drain Current (ID): 24A @ TC = 25℃
· Drain-Source Voltage (VDSS): 1000V (Min)
· Static Drain-Source On-Resistance (RDS(on)): 0.39Ω (Max) @ VGS=10V
· 100% avalanche tested
· Minimum lot-to-lot variations

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	1000	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	24	A
IDM	Drain Current-Single Pluse	96	A
PD	Total Dissipation @TC=25℃	560	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	0.21	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 1mA	1000	--	V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 8mA	3.0	5.5	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID= 12A	--	0.39	Ω
IGSS	Gate-Body Leakage Current	VGS= ±20V; VDS= 0	--	±200	nA
IDSS	Zero Gate Voltage Drain Current	VDS= 1000V; VGS= 0	--	100	uA
VSD	Forward On-Voltage	IS= 24A; VGS= 0	--	1.5	V

## Applications

· Motor drive
· DC-DC converter
· Power switch
· Solenoid drive

## Important Notice

· Products are not designed for use in equipment requiring specialized quality or reliability, or in hazardous environments, aerospace, or medical fields.
· ISC makes no warranty or guarantee regarding the suitability of its products.