LL4448 / Goodwork Semiconductor Co., Ltd .

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Part No.	LL4448
Manufacturer	GWSEMI
Size	507 Kbytes
Pages	2 pages
Description	SWITCHING DIODE

Datasheet Summary with AI

# LL4448 Switching Diode

## Features

️· Fast switching (TRR < 4.0 nS)
️· Power dissipation: 500mW
️· High stability and reliability
️· Low reverse leakage

## Mechanical Data

️· Case: Glass Case MINI MELF
️· Polarity: Color band denotes cathode
️· Mounting: Any position

## Maximum Ratings & Thermal Characteristics

️· Reverse Voltage (VR): 75V
️· Peak Reverse Voltage (VRM): 100V
️· Power Dissipation (Pd): 500mW
️· Operating Junction Temperature (Tj): 175°C
️· Storage Temperature Range (Ts): -65°C to +200°C
️· Working Inverse Voltage (WIV): 75V
️· Average Rectified Current (IO): 150mA
️· Non-repetitive Peak Forward Current (IFM): 450mA
️· Peak Forward Surge Current (IFSM) @ tp=1s, TA=25°C: 2.0A

## Electrical Characteristics

️· Breakdown Voltage (BV) @ IR=100uA: 100V
️· Breakdown Voltage (BV) @ IR=5uA: 75V
️· Reverse Leakage Current (IR) @ VR=20V: ≤25nA
️· Reverse Leakage Current (IR) @ VR=75V: ≤5uA
️· Forward Voltage (VF) @ IF=5mA (LL4448): 0.62-0.72V
️· Forward Voltage (VF) @ IF=10mA (LL4448): ≤1.0V
️· Forward Voltage (VF) @ IF=100mA (LL4448): ≤1.0V
️· Reverse Recovery Time (TRR) @ IF=10mA, IR=1.0mA, RL=100Ω: ≤4ns
️· Capacitance (C) @ VR=0V, f=1MHz: ≤4pF

## Ratings and Characteristic Curves

️· Includes forward characteristics, power dissipation vs. temperature, capacitance vs. reverse voltage, and repetitive peak forward current vs. pulse duration graphs.
- Valid with leads 8mm from case.