CDBF0145 / Comchip Technology - Datasheet(PDF) Chat AI

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Part No.	CDBF0145
Manufacturer	COMCHIP
Size	151 Kbytes
Pages	2 pages
Description	SMD Schottky Barrier Diode

Datasheet Summary with AI

· Reverse voltage (VR): 45 V
· Average forward current (Io): 100 mA
· Forward current surge peak (IFSM): 1 A (8.3 ms)
· Power dissipation (PD): 250 mW
· Storage temperature (TSTG): -40°C to +125°C
· Junction temperature (Tj): +125°C

## Electrical Characteristics (TA = 25°C unless otherwise noted)

· Forward voltage (VF @ IF = 100 mA): 0.55 V (typ)
· Reverse current (IR @ VR = 45 V): 1 uA (max)
· Capacitance between terminals (CT @ f = 1 MHz, VR = 10 VDC): 1 pF (typ)

# CDBF0145 - SMD Schottky Barrier Diode

## Features

· Designed for small surface mounting.
· Thin/leadless package.
· Low leakage current (I<sub>R</sub> = 0.1uA typ. @V<sub>R</sub> = 10V).
· Majority carrier conduction.

## Mechanical Data

· Case: 1005 (2512) molded plastic package.
· Terminals: Gold plated, solderable per MIL-STD-750, method 2026.
· Polarity: Indicated by cathode band.
· Mounting position: Any.
· Weight: 0.006 gram (approximately).

## Maximum Ratings (TA = 25°C unless otherwise noted)

· Repetitive peak reverse voltage (VRRM): 50 V
· Reverse voltage (VR): 45 V
· Average forward current (Io): 100 mA
· Forward current surge peak (IFSM): 1 A (8.3 ms)
· Power dissipation (PD): 250 mW
· Storage temperature (TSTG): -40°C to +125°C
· Junction temperature (Tj): +125°C

## Electrical Characteristics (TA = 25°C unless otherwise noted)

· Forward voltage (VF @ IF = 100 mA): 0.55 V (typ)
· Reverse current (IR @ VR = 45 V): 1 uA (max)
· Capacitance between terminals (CT @ f = 1 MHz, VR = 10 VDC): 1 pF (typ)