CDBF0245 / Comchip Technology - Datasheet(PDF) Chat AI

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Part No.	CDBF0245
Manufacturer	COMCHIP
Size	151 Kbytes
Pages	2 pages
Description	SMD Schottky Barrier Diode

Datasheet Summary with AI

| :--------------------------- | :-------------------------------------------- | :-: | :-: | :-: | :-: |
| Io | | | 200 | | mA |
| VR | | | | 45 | V |
| VRRM | 8.3 ms single half sine wave | | 300 | | V |
| IFSM | | | 3000| | A |
| PD | | | | 250 | mW |
| TSTG | | -40 | | 125 | C |
| T j | | | | 125 | C |

Electrical Characteristics

| Parameter | Conditions | Min | Typ | Max | Unit |
| :------------------ | :--------------- | :-: | :-: | :-: | :-: |
| VF | IF=200 mA DC | | 0.55 | | V |
| IR | VR=10 V | | 0.1 | | uA |
| CT | f=1MHz, 10VDC reverse voltage | | | 10 | pF |

# CDBF0245 Schottky Barrier Diode

## Features

️· Designed for small surface mounting.
️· Thin/leadless package.
️· Low leakage current (IR=0.1uA typ. @VR=10V).
️· Majority carrier conduction.

Mechanical Data

️· Case: 1005 (2512) molded plastic.
️· Terminals: Gold plated, solderable per MIL-STD-750, method 2026.
️· Polarity: Indicated by cathode band.
️· Mounting position: Any.
️· Weight: 0.006 gram.

Maximum Ratings

Parameter Conditions Min Typ Max Unit

Io 200 mA

VR 45 V

VRRM 8.3 ms single half sine wave 300 V

IFSM 3000 A

PD 250 mW

TSTG -40 125 C

T j 125 C

Electrical Characteristics

Parameter Conditions Min Typ Max Unit

VF IF=200 mA DC 0.55 V

IR VR=10 V 0.1 uA

CT f=1MHz, 10VDC reverse voltage 10 pF

Parameter	Conditions	Min	Typ	Max	Unit
Io			200		mA
VR				45	V
VRRM	8.3 ms single half sine wave		300		V
IFSM			3000		A
PD				250	mW
TSTG		-40		125	C
T j				125	C

Parameter	Conditions	Typ	Max	Unit
VF	I<sub>F</sub>=200 mA DC	0.55		V
I<sub>R</sub>	V<sub>R</sub>=10 V	0.1		uA
C<sub>T</sub>	f=1MHz, 10VDC reverse voltage		10	pF