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Part No.	STK13003
Manufacturer	STMICROELECTRONICS
Size	217 Kbytes
Pages	7 pages
Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Datasheet Summary with AI

## Electrical Characteristics (Tcase = 25°C)
️· Collector Cut-off Current (ICEV): 1mA - 5mA
️· Emitter-Base Breakdown Voltage (BVEBO): 9V - 18V
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.5V - 3V (depending on IC and IB)
️· Base-Emitter Saturation Voltage (VBE(sat)): 1V - 1.2V
️· DC Current Gain (hFE): 8-35 (depending on group A or B and IC)

## Switching Characteristics
️· Rise Time (tr): 1µs
️· Storage Time (ts): 4µs
️· Fall Time (tf): 0.7µs (resistive load)
️· Storage Time (ts): 0.8µs (inductive load)

## Package
️· SOT-82. Dimensions provided in datasheet.

# STK13003 NPN Power Transistor

## Overview
️· High voltage, fast-switching NPN transistor in SOT-82 package.
️· Suitable for electronic ballasts and switch-mode power supplies.
️· Reverse pins out Vs configuration.

## Key Features
️· Medium voltage capability.
️· Low spread of dynamic parameters.
️· Minimum lot-to-lot spread for reliable operation.
️· Very high switching speed.

## Absolute Maximum Ratings
️· Collector-Emitter Voltage (VCE): 700V
️· Collector Current (IC): 1.5A
️· Peak Collector Current (ICM): 3A
️· Total Dissipation (Ptot): 40W
️· Operating Junction Temperature (Tj): 150°C

## Electrical Characteristics (Tcase = 25°C)
️· Collector Cut-off Current (ICEV): 1mA - 5mA
️· Emitter-Base Breakdown Voltage (BVEBO): 9V - 18V
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.5V - 3V (depending on IC and IB)
️· Base-Emitter Saturation Voltage (VBE(sat)): 1V - 1.2V
️· DC Current Gain (hFE): 8-35 (depending on group A or B and IC)

## Switching Characteristics
️· Rise Time (tr): 1µs
️· Storage Time (ts): 4µs
️· Fall Time (tf): 0.7µs (resistive load)
️· Storage Time (ts): 0.8µs (inductive load)

## Package
️· SOT-82. Dimensions provided in datasheet.