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BD202 Datasheet with Chat AI
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  • # Example questions: ➢ What is the transition frequency (ft) for the bd201 transistor?
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  • Part No.BD202
    ManufacturerCOMSET
    Size194 Kbytes
    Pages3 pages
    DescriptionSILCON EPITAXIAL-BASE POWER TRANSITORS
    Datasheet Summary with AI

    1. Overview

    ️· This document describes PNP transistors (BD202 & BD204) and NPN transistors (BD201 & BD203) from COMSET Semiconductors.
    ️· The transistors are packaged in a TO-220 case.
    ️· The document contains electrical and mechanical specifications, along with notes about pulse testing conditions.

    2. Key Specifications (Summary Table)

    Parameter BD201 (NPN) BD202 (PNP) BD203 (NPN) BD204 (PNP) Notes/Conditions
    Vceo (Collector-Emitter Breakdown Voltage) - 45V - 60V Ic=0.2A, Ib=0V
    Vbe (Base-Emitter Voltage) - 1.5V - 1.5V Ic=3A, Vce=2.0V (Pulse)
    Vce(sat) (Collector-Emitter Saturation Voltage) - <1.5V (Pulse) - <1.5V (Pulse) Ic=6A, Ib=0.6A (Pulse)
    hFE (DC Current Gain) - 30 (min) - 30 (min) Ic=2A, Vce=2.0V (Pulse)
    f(hfe) (Cutoff Frequency) 25 kHz - - - Ic=0.3A, Vce=3.0V
    fT (Transition Frequency) - - - - f=1MHz
    Is/b (Breakdown Current) - - - - Vce=40V, Tp=0.1s
    ton (Turn-on Time) - - - -
    toff (Turn-off Time) - - - - ICon = 2A, Ibon = Iboff = 0.2A

    3. Mechanical Specifications (TO-220 Package)

    ️· The document lists dimensional specifications for the TO-220 package. These are provided in both millimeters and inches. It specifies pin assignments: Pin 1 - Base, Pin 2 - Collector, Pin 3 - Emitter.

    4. Pulse Test Conditions

    ️· When specified with a value in parentheses, the value is derived from pulse testing. The pulse test conditions are: *tp < 300 µs, δ = 2%* . This means the measurements were taken with short pulses rather than continuous DC operation.

    Important Notes and Considerations:

    ️· Pulse Testing: Many of the specifications are derived from pulse testing. This means the transistors may not perform identically under continuous DC operation. Refer to the datasheet for absolute maximum ratings and recommended operating conditions.
    ️· Variations: There will be manufacturing variations between individual transistors. The datasheet provides typical and maximum values.
    ️· Datasheet Reliance: This information is extracted from the provided document. Always refer to the official datasheet for the most accurate and complete information.
    ️· COMSET: The models are from COMSET Semiconductors, which is important for identifying the exact product and accessing further documentation.

    1. Overview

    ️· This document describes PNP transistors (BD202 & BD204) and NPN transistors (BD201 & BD203) from COMSET Semiconductors.
    ️· The transistors are packaged in a TO-220 case.
    ️· The document contains electrical and mechanical specifications, along with notes about pulse testing conditions.

    2. Key Specifications (Summary Table)

    Parameter BD201 (NPN) BD202 (PNP) BD203 (NPN) BD204 (PNP) Notes/Conditions
    Vceo (Collector-Emitter Breakdown Voltage) - 45V - 60V Ic=0.2A, Ib=0V
    Vbe (Base-Emitter Voltage) - 1.5V - 1.5V Ic=3A, Vce=2.0V (Pulse)
    Vce(sat) (Collector-Emitter Saturation Voltage) - <1.5V (Pulse) - <1.5V (Pulse) Ic=6A, Ib=0.6A (Pulse)
    hFE (DC Current Gain) - 30 (min) - 30 (min) Ic=2A, Vce=2.0V (Pulse)
    f(hfe) (Cutoff Frequency) 25 kHz - - - Ic=0.3A, Vce=3.0V
    fT (Transition Frequency) - - - - f=1MHz
    Is/b (Breakdown Current) - - - - Vce=40V, Tp=0.1s
    ton (Turn-on Time) - - - -
    toff (Turn-off Time) - - - - ICon = 2A, Ibon = Iboff = 0.2A

    3. Mechanical Specifications (TO-220 Package)

    ️· The document lists dimensional specifications for the TO-220 package. These are provided in both millimeters and inches. It specifies pin assignments: Pin 1 - Base, Pin 2 - Collector, Pin 3 - Emitter.

    4. Pulse Test Conditions

    ️· When specified with a value in parentheses, the value is derived from pulse testing. The pulse test conditions are: *tp < 300 µs, δ = 2%* . This means the measurements were taken with short pulses rather than continuous DC operation.

    Important Notes and Considerations:

    ️· Pulse Testing: Many of the specifications are derived from pulse testing. This means the transistors may not perform identically under continuous DC operation. Refer to the datasheet for absolute maximum ratings and recommended operating conditions.
    ️· Variations: There will be manufacturing variations between individual transistors. The datasheet provides typical and maximum values.
    ️· Datasheet Reliance: This information is extracted from the provided document. Always refer to the official datasheet for the most accurate and complete information.
    ️· COMSET: The models are from COMSET Semiconductors, which is important for identifying the exact product and accessing further documentation.

    Part No.BD202
    ManufacturerCOMSET
    Size194 Kbytes
    Pages3 pages
    DescriptionSILCON EPITAXIAL-BASE POWER TRANSITORS
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