# TSM4835
## Preliminary 30V P-Channel MOSFET

Features
· Advance Trench Process Technology
· High Density Cell Design for Ultra Low On-resistance

Applications
· Load Switches
· Desktop PCs
· Notebook PCs

Package
· SOP-8
· 2.5Kpcs / 13” Ree

Absolute Maximum Ratings (Ta = 25°C)
· Drain-Source Voltage (VDS): -30V
· Gate-Source Voltage (VGS): ±25V
· Continuous Drain Current (ID): -9.6A
· Pulsed Drain Current (IDM): -50A
· Continuous Source Current (IS): -2.1A
· Maximum Power Dissipation (PD): 2.5W (Ta=25°C), 1.6W (Ta=75°C)
· Operating Junction Temperature (TJ): +150°C
· Operating/Storage Temperature Range (TJ, TSTG): -55 to +150°C

Thermal Performance
· Junction to Foot (Drain) Thermal Resistance (RθJF): 18°C/W
· Junction to Ambient Thermal Resistance (RθJA): 39°C/W

Product Summary

VDS (V)	RDS(on) (mΩ)	ID (A)
-30	18 @ VGS = -10V	-9.6
-30	30 @ VGS = -4.5V	-7.5

Electrical Specifications (Ta = 25°C)
· Drain-Source Breakdown Voltage (BVDSS): -30V
· Gate Threshold Voltage (VGS(TH)): -1 to -3V
· Zero Gate Voltage Drain Current (IDSS): -1.0 µA
· On-State Drain Current (ID(ON)): -50A
· Drain-Source On-State Resistance (RDS(ON)): 14-18 mΩ @ VGS=-10V, 23-30 mΩ @ VGS=-4.5V
· Forward Transconductance (gfs): 30 S
· Diode Forward Voltage (VSD): -0.8 to -1.2V

Dynamic Characteristics
· Total Gate Charge (Qg): 25-37 nC
· Gate-Source Charge (Qgs): 6.5 nC
· Gate-Drain Charge (Qgd): 12.5 nC

Switching Characteristics
· Turn-On Delay Time (td(on)): 15-25 nS
· Turn-On Rise Time (tr): 13-20 nS
· Turn-Off Delay Time (td(off)): 60-100 nS
· Turn-Off Fall Time (tf): 45-70 nS

SOP-8 Mechanical Dimensions (millimeters)
· A: 4.80-5.00
· B: 3.80-4.00
· C: 1.35-1.75
· D: 0.35-0.49
· F: 0.40-1.25
· P: 5.80-6.20

Notice: Not for use in medical, life-saving, or life-sustaining applications.