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CMLT5088EM Datasheet with Chat AI
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  • # Example questions: ➢ What is the maximum difference in vbe between the two transistors (vbe1-vbe2) when the collector current (ic) is 100μa?
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  • Part No.CMLT5088EM
    ManufacturerCENTRAL
    Size685 Kbytes
    Pages2 pages
    DescriptionSURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS
    Datasheet Summary with AI

    # CMLT5088EM – Dual Matched NPN Silicon Transistors

    ## Description

    ️· Dual, matched 5088E NPN silicon transistors
    ️· Designed for high gain and low noise applications
    ️· Marking Code: 88M
    ️· Halogen Free by design

    ## Features

    ️· Transistor pair matched for VBE(ON)

    ## Maximum Ratings (TA=25°C)

    ️· VCBO: 50 V
    ️· VCEO: 50 V
    ️· VEBO: 5.0 V
    ️· IC: 100 mA
    ️· PD: 350 mW
    ️· TJ, Tstg: -65 to +150 °C
    ️· ΘJA: 357 °C/W

    ## Electrical Characteristics (Per Transistor, TA=25°C)

    ️· ICBO: 50 nA
    ️· IEBO: 50 nA
    ️· BVCBO: 50 - 135 V
    ️· BVCEO: 50 - 65 V
    ️· BVEBO: 5.0 - 8.7 V
    ️· VCE(SAT): 45 - 400 mV (various conditions)
    ️· VBE(SAT): 700 - 800 mV
    ️· hFE: 300 - 900 (various conditions)
    ️· fT: 100 MHz
    ️· Cob: 4.0 pF
    ️· Cib: 15 pF
    ️· hfe: 350 - 1400
    ️· NF: 3.0 dB

    ## Matching Characteristics

    ️· |VBE1-VBE2|: 10 mV (various conditions)

    ## Case and Pin Configuration

    ️· SOT-563 case
    ️· Pin 1: Emitter Q1
    ️· Pin 2: Base Q1
    ️· Pin 3: Collector Q2
    ️· Pin 4: Emitter Q2
    ️· Pin 5: Base Q2
    ️· Pin 6: Collector Q1

    # CMLT5088EM – Dual Matched NPN Silicon Transistors

    ## Description

    ️· Dual, matched 5088E NPN silicon transistors
    ️· Designed for high gain and low noise applications
    ️· Marking Code: 88M
    ️· Halogen Free by design

    ## Features

    ️· Transistor pair matched for VBE(ON)

    ## Maximum Ratings (TA=25°C)

    ️· VCBO: 50 V
    ️· VCEO: 50 V
    ️· VEBO: 5.0 V
    ️· IC: 100 mA
    ️· PD: 350 mW
    ️· TJ, Tstg: -65 to +150 °C
    ️· ΘJA: 357 °C/W

    ## Electrical Characteristics (Per Transistor, TA=25°C)

    ️· ICBO: 50 nA
    ️· IEBO: 50 nA
    ️· BVCBO: 50 - 135 V
    ️· BVCEO: 50 - 65 V
    ️· BVEBO: 5.0 - 8.7 V
    ️· VCE(SAT): 45 - 400 mV (various conditions)
    ️· VBE(SAT): 700 - 800 mV
    ️· hFE: 300 - 900 (various conditions)
    ️· fT: 100 MHz
    ️· Cob: 4.0 pF
    ️· Cib: 15 pF
    ️· hfe: 350 - 1400
    ️· NF: 3.0 dB

    ## Matching Characteristics

    ️· |VBE1-VBE2|: 10 mV (various conditions)

    ## Case and Pin Configuration

    ️· SOT-563 case
    ️· Pin 1: Emitter Q1
    ️· Pin 2: Base Q1
    ️· Pin 3: Collector Q2
    ️· Pin 4: Emitter Q2
    ️· Pin 5: Base Q2
    ️· Pin 6: Collector Q1

    Part No.CMLT5088EM
    ManufacturerCENTRAL
    Size685 Kbytes
    Pages2 pages
    DescriptionSURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS
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