# SILICON EPITAXIAL NPN TRANSISTOR 2N4912

## ELECTRICAL CHARACTERISTICS

️· Collector-Emitter Breakdown Voltage (V(BR)CEO): 80V (IC = 10mA, IB = 0)
️· Collector-Emitter Cut-Off Current (ICEO): 0.5mA (VCE = 40V, IB = 0), 0.1mA (VCE = 80V, VBE = -1.5V), 1.0mA (VCE = 80V, VBE = -1.5V, TC = 150°C)
️· Emitter-Base Cut-Off Current (IEBO): 1.0mA (VEB = 5V, IC = 0)
️· Collector-Base Cut-Off Current (ICBO): 0.1mA (VCB = 80V, IE = 0)
️· Base-Emitter Voltage (VBE): 1.3V (IC = 1.0A, VCE = 1.0V)
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.6V (IC = 1.0A, IB = 100mA)
️· Base-Emitter Saturated Voltage (VBE(sat)): 1.3V (IC = 1.0A, IB = 100mA)
️· Forward Current Transfer Ratio (hFE): 40 (IC = 50mA, VCE = 1.0V), 20-100 (IC = 500mA, VCE = 1.0V), 10+ (IC = 1.0A, VCE = 1.0V)

## DYNAMIC CHARACTERISTICS

️· Transition Frequency (fT): 3.0-22 MHz (IC = 250mA, VCE = 10V, f = 1.0MHz)
️· Small-Signal Current Gain (hfe): 25-70 (IC = 250mA, VCE = 10V, f = 1.0KHz)
️· Output Capacitance (Cobo): 45-100 pF (IE = 0, VCB = 10V, f = 1.0MHz)

## ABSOLUTE MAXIMUM RATINGS (TC = 25°C)

️· Collector-Base Voltage (VCBO): 80V
️· Collector-Emitter Voltage (VCEO): 80V
️· Emitter-Base Voltage (VEBO): 5V
️· Continuous Collector Current (IC): 1.0A
️· Base Current (IB): 1.0A
️· Total Power Dissipation (PD): 25W (at Tc = 25°C), Derate 0.143W/°C above 25°C
️· Junction Temperature (TJ): -65 to +200°C
️· Storage Temperature (Tstg): -65 to +200°C

## THERMAL PROPERTIES

️· Thermal Resistance, Junction to Case (RθJC): 7 °C/W

## MECHANICAL DATA

️· Package: TO66 (TO-213AA)
️· Pinout: Pin 1 - Base, Pin 2 - Emitter, Case - Collector