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AM27X256 Datasheet with Chat AI
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  • Part No.AM27X256
    ManufacturerAMD
    Size139 Kbytes
    Pages10 pages
    Description256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device
    Datasheet Summary with AI

    1. Device Overview:

    ️· Part Numbers: AM9516 / AM9516A. The "A" variant likely indicates a minor revision or enhancement.
    ️· Function: This is a synchronous static RAM (SSRAM) or memory device. The document emphasizes its use with the Motorola 68000 microprocessor family.
    ️· Organization: It's a 64K x 8-bit DRAM, meaning it can store 64,000 bytes of data, each 8 bits wide.

    2. Electrical Characteristics (Key Highlights):

    ️· Supply Voltage (Vcc): 5.0V (+/- 10%). This is a standard voltage for devices of that era.
    ️· Operating Temperature Range: -40°C to +85°C. This indicates a wide range of usable environments.
    ️· Access Time (tACC): This is a *critical* parameter. Values range from 35ns to 70ns depending on the temperature. Lower access times mean faster memory operation. The datasheet specifies different access times based on the operating temperature. This is important for timing and system design.
    ️· Refresh Requirements: This memory does *not* require external refresh, a feature of synchronous memory.
    ️· Power Consumption: The datasheet provides detailed power dissipation characteristics. Important for thermal design and battery-powered applications.

    3. Functional Characteristics (Key Features):

    ️· Synchronous Operation: It operates synchronously with a clock signal, which enables higher performance and simplifies timing.
    ️· Address Multiplexing: It uses address multiplexing to reduce the number of address lines required.
    ️· Input Enable (IE) Control: Input enable allows enabling or disabling the inputs.
    ️· Output Disable (OD): It has an output disable feature to prevent data from being driven onto the bus when the memory is not actively outputting data.

    4. Timing Diagrams and Switching Characteristics:

    ️· The document has extensive timing diagrams which visually represent the signal relationships between the clock, addresses, control signals (CE, OE, IE, OD), and data signals. *Crucially*, the timing diagrams specify precise timing intervals for:
    - tCE: Chip Enable time. The time during which the memory is enabled.
    - tOE: Output Enable time. The time it takes for data to become valid on the output.
    - tACC: Access time. The overall time from address valid to data valid.
    - tDF: Time from CE or OE becoming inactive to the output being high impedance (tri-state).
    ️· *Understanding these diagrams and their timing values is absolutely essential for integrating the memory correctly into a system.* The timing is dependent on the temperature.

    5. Key Considerations and Implications:

    ️· 68000 Microprocessor Family: This memory was designed *specifically* to work well with Motorola's 68000 family of microprocessors. While it *might* be usable with other systems, optimal performance and compatibility are guaranteed within the 68000 ecosystem.
    ️· Timing Sensitivity: Synchronous memory is more timing-sensitive than asynchronous memory. Careful attention must be paid to clock frequency, signal propagation delays, and layout to avoid timing violations.
    ️· Power Dissipation: The power dissipation figures are important for thermal management and battery life in portable systems. Proper heat sinking or airflow may be required.
    ️· Signal Integrity: Like all high-speed circuits, signal integrity is critical. Proper termination resistors, controlled impedance traces, and careful layout are needed to minimize signal reflections and noise.
    ️· Obsolete Technology: This is an older memory technology. Obtaining parts can be difficult, and compatibility with modern systems is unlikely without significant modification.

    1. Device Overview:

    ️· Part Numbers: AM9516 / AM9516A. The "A" variant likely indicates a minor revision or enhancement.
    ️· Function: This is a synchronous static RAM (SSRAM) or memory device. The document emphasizes its use with the Motorola 68000 microprocessor family.
    ️· Organization: It's a 64K x 8-bit DRAM, meaning it can store 64,000 bytes of data, each 8 bits wide.

    2. Electrical Characteristics (Key Highlights):

    ️· Supply Voltage (Vcc): 5.0V (+/- 10%). This is a standard voltage for devices of that era.
    ️· Operating Temperature Range: -40°C to +85°C. This indicates a wide range of usable environments.
    ️· Access Time (tACC): This is a *critical* parameter. Values range from 35ns to 70ns depending on the temperature. Lower access times mean faster memory operation. The datasheet specifies different access times based on the operating temperature. This is important for timing and system design.
    ️· Refresh Requirements: This memory does *not* require external refresh, a feature of synchronous memory.
    ️· Power Consumption: The datasheet provides detailed power dissipation characteristics. Important for thermal design and battery-powered applications.

    3. Functional Characteristics (Key Features):

    ️· Synchronous Operation: It operates synchronously with a clock signal, which enables higher performance and simplifies timing.
    ️· Address Multiplexing: It uses address multiplexing to reduce the number of address lines required.
    ️· Input Enable (IE) Control: Input enable allows enabling or disabling the inputs.
    ️· Output Disable (OD): It has an output disable feature to prevent data from being driven onto the bus when the memory is not actively outputting data.

    4. Timing Diagrams and Switching Characteristics:

    ️· The document has extensive timing diagrams which visually represent the signal relationships between the clock, addresses, control signals (CE, OE, IE, OD), and data signals. *Crucially*, the timing diagrams specify precise timing intervals for:
    - tCE: Chip Enable time. The time during which the memory is enabled.
    - tOE: Output Enable time. The time it takes for data to become valid on the output.
    - tACC: Access time. The overall time from address valid to data valid.
    - tDF: Time from CE or OE becoming inactive to the output being high impedance (tri-state).
    ️· *Understanding these diagrams and their timing values is absolutely essential for integrating the memory correctly into a system.* The timing is dependent on the temperature.

    5. Key Considerations and Implications:

    ️· 68000 Microprocessor Family: This memory was designed *specifically* to work well with Motorola's 68000 family of microprocessors. While it *might* be usable with other systems, optimal performance and compatibility are guaranteed within the 68000 ecosystem.
    ️· Timing Sensitivity: Synchronous memory is more timing-sensitive than asynchronous memory. Careful attention must be paid to clock frequency, signal propagation delays, and layout to avoid timing violations.
    ️· Power Dissipation: The power dissipation figures are important for thermal management and battery life in portable systems. Proper heat sinking or airflow may be required.
    ️· Signal Integrity: Like all high-speed circuits, signal integrity is critical. Proper termination resistors, controlled impedance traces, and careful layout are needed to minimize signal reflections and noise.
    ️· Obsolete Technology: This is an older memory technology. Obtaining parts can be difficult, and compatibility with modern systems is unlikely without significant modification.

    Part No.AM27X256
    ManufacturerAMD
    Size139 Kbytes
    Pages10 pages
    Description256 Kilobit (32 K x 8-Bit) CMOS ExpressROM Device
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