Device: N-Channel MOSFET (SMS2020)

Key Characteristics:

️· Voltage: 20V
️· Current: 830mA

Electrical Characteristics (Static - TA = 25°C):

️· Drain-Source Breakdown Voltage (VDS(breakdown)): Not explicitly stated, but implied to be >20V.
️· Gate-Source Threshold Voltage (VGS(th)): 0.45 - 0.85 V
️· Drain-Source On-Resistance (RDS(on)):
- @ VGS = 4.5V, ID = 0.55A: ~310 Ohms (max)
- @ VGS = 2.5V, ID = 0.35A: ~460 Ohms (max)
️· Forward Transconductance (gFS): ~2 S (Siemens)
️· Zero Gate Voltage Drain Current (IDSS): <1 µA
️· Gate-Source Leakage Current (IGSS): ±5 µA
️· Diode Forward Voltage (VSD): 0.5 - 1.5 V @ IS = 350mA

Dynamic Characteristics:

️· Turn-on Delay Time (Td(on)): ~22 ns
️· Rise Time (Tr): ~80 ns
️· Turn-off Delay Time (Td(off)): ~700 ns
️· Fall Time (Tf): ~380 ns

Thermal Characteristics:

️· Junction-to-Ambient Thermal Resistance (RθJA):
- Surface Mounted (1 sq inch pad): 320-385 °C/W
- Surface Mounted (min pad): 360-420 °C/W
️· Junction-to-Case Thermal Resistance (RθJC): 260-300 °C/W

Important Notes:

️· The document specifies that any changes in specifications will not be individually communicated.
️· The datasheet includes characteristic curves (graphs) illustrating the MOSFET’s behavior under different conditions.

Revision: Rev. B, dated 21-May-2013.