# BLF242 HF/VHF Power MOS Transistor

## Features

· High power gain
· Low noise
· Easy power control
· Good thermal stability
· Withstands full load mismatch
· Gold metallization for reliability

## Description

· Silicon N-channel enhancement mode vertical D-MOS transistor
· Designed for professional transmitter applications in the HF/VHF frequency range
· Encapsulated in a 4-lead SOT123 flange envelope

## Pin Configuration

· Pin 1: Drain
· Pin 2: Source
· Pin 3: Gate
· Pin 4: Source

## Quick Reference Data

· VDS: 28V
· GP: -13 dB (typ. 16 dB)
· PL: 5W
· ID: 50% (typ. 60%)
· Mode of Operation: CW, Class-B
· Frequency: 175 MHz

## Warnings & Cautions

· Contains beryllium oxide - handle with care and dispose properly
· Device is supplied in an antistatic package.

## Limiting Values

· VDS: 65V
· ±VGS: 20V
· ID: 1A
· Plot: 16W
· Tstg: -65°C
· Tj: 200°C

## Thermal Resistance

· Rthj-mb: 11 K/W
· Rth mb-h: 0.3 K/W

## Characteristics (at 25°C unless otherwise specified)

· V(BR)DSS:
· IDSS:
· IGSS:
· Vcs(th):
· 9fs:
· Ros(on):
· IDSX:
· C is:
· Cos:
· C rs:
· T.C.:

## Package Outline (SOT123A)

· Flanged ceramic package with 2 mounting holes and 4 leads
· Dimensions available in mm and inches.