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BLF175 Datasheet with Chat AI
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  • Part No.BLF175
    ManufacturerNJSEMI
    Size141 Kbytes
    Pages4 pages
    DescriptionHFA/HF power MOS transistor
    Datasheet Summary with AI

    1. General Description & Applications

    ️· Type: Silicon N-channel enhancement mode vertical D-MOSFET.
    ️· Designed For: Large signal amplifier applications in the HF/VHF frequency range.
    ️· Package: SOT123A (flanged ceramic package with 4 leads). The package has a ceramic cap and the leads are isolated.
    ️· Key Features:
    - High power gain
    - Low intermodulation distortion
    - Easy power control
    - Good thermal stability
    - Withstands full load mismatch
    - Gold metallization for reliability

    2. Marking & Matched Pairs

    ️· The MOSFET has a marking code on its body. This code provides information on the gate-source voltage (Vcs) and is used for matched pair applications. Refer to the NJ Semi-Conductors handbook for details on interpreting the code.

    3. Quick Reference Data (Typical Values)

    Parameter Value Units
    Vds (max) 50 V
    Operation Modes Class-A, Class-AB, CW
    f (frequency) 28 or 108 MHz
    PL (Power) 8 or 30 W
    IDQ 800, 150, or 30 mA
    >1D %
    G p dB
    d 3 dB

    4. Key Electrical Characteristics (Highlights)

    ️· Absolute Maximum Ratings:
    - Vds = 200 V
    - Vgs = ± 20 V
    - Id = 4 A
    - Ptot = 68 W
    - Junction Temperature = +150°C
    - Storage Temperature = -65°C
    ️· Thermal Resistance:
    - Rthj-mb = 2.6 K/W
    - Rthmb-sink = 0.3 K/W
    ️· Characteristics (at Tj = 25°C unless otherwise noted):
    - V(BR)DSS (Drain-Source Breakdown Voltage)
    - IGSS (Gate-Source Leakage Current)
    - Vcsth (Threshold Voltage)
    - AVgs (Voltage Amplification)
    - RDS(on) (Drain-Source On Resistance)
    - Input and Output Capacitance
    - Feedback Capacitance

    5. Group Indication

    ️· The datasheet references "group indication" which refers to a grouping of MOSFETs based on their electrical characteristics. Different groups (A, B, C, D, E, F, G, H, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z) have slightly different electrical characteristics, and group code may be indicated with the marking.

    6. Package and Dimensions

    ️· The physical dimensions of the SOT123A package are provided in the datasheet. This is crucial for board layout and mechanical design.

    Important Notes:

    ️· This summary is based solely on the text provided. Refer to the complete datasheet for detailed specifications, graphs, and test conditions.
    ️· Pay close attention to the application circuit recommendations within the full datasheet, as proper biasing and component selection are vital for optimal performance.

    1. General Description & Applications

    ️· Type: Silicon N-channel enhancement mode vertical D-MOSFET.
    ️· Designed For: Large signal amplifier applications in the HF/VHF frequency range.
    ️· Package: SOT123A (flanged ceramic package with 4 leads). The package has a ceramic cap and the leads are isolated.
    ️· Key Features:
    - High power gain
    - Low intermodulation distortion
    - Easy power control
    - Good thermal stability
    - Withstands full load mismatch
    - Gold metallization for reliability

    2. Marking & Matched Pairs

    ️· The MOSFET has a marking code on its body. This code provides information on the gate-source voltage (Vcs) and is used for matched pair applications. Refer to the NJ Semi-Conductors handbook for details on interpreting the code.

    3. Quick Reference Data (Typical Values)

    Parameter Value Units
    Vds (max) 50 V
    Operation Modes Class-A, Class-AB, CW
    f (frequency) 28 or 108 MHz
    PL (Power) 8 or 30 W
    IDQ 800, 150, or 30 mA
    >1D %
    G p dB
    d 3 dB

    4. Key Electrical Characteristics (Highlights)

    ️· Absolute Maximum Ratings:
    - Vds = 200 V
    - Vgs = ± 20 V
    - Id = 4 A
    - Ptot = 68 W
    - Junction Temperature = +150°C
    - Storage Temperature = -65°C
    ️· Thermal Resistance:
    - Rthj-mb = 2.6 K/W
    - Rthmb-sink = 0.3 K/W
    ️· Characteristics (at Tj = 25°C unless otherwise noted):
    - V(BR)DSS (Drain-Source Breakdown Voltage)
    - IGSS (Gate-Source Leakage Current)
    - Vcsth (Threshold Voltage)
    - AVgs (Voltage Amplification)
    - RDS(on) (Drain-Source On Resistance)
    - Input and Output Capacitance
    - Feedback Capacitance

    5. Group Indication

    ️· The datasheet references "group indication" which refers to a grouping of MOSFETs based on their electrical characteristics. Different groups (A, B, C, D, E, F, G, H, J, K, L, M, N, O, P, Q, R, S, T, U, V, W, X, Y, Z) have slightly different electrical characteristics, and group code may be indicated with the marking.

    6. Package and Dimensions

    ️· The physical dimensions of the SOT123A package are provided in the datasheet. This is crucial for board layout and mechanical design.

    Important Notes:

    ️· This summary is based solely on the text provided. Refer to the complete datasheet for detailed specifications, graphs, and test conditions.
    ️· Pay close attention to the application circuit recommendations within the full datasheet, as proper biasing and component selection are vital for optimal performance.

    Part No.BLF175
    ManufacturerNJSEMI
    Size141 Kbytes
    Pages4 pages
    DescriptionHFA/HF power MOS transistor
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