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2SK610 Datasheet with Chat AI
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  • Part No.2SK610
    ManufacturerISC
    Size64 Kbytes
    Pages2 pages
    DescriptionDrain Source Voltage-: VDSS= 400V(Min)
    Datasheet Summary with AI

    # 2SK610 N-Channel MOSFET Transistor

    ## Features

    ️· Drain Current: ID = 3A @ TC = 25°C
    ️· Drain-Source Voltage: V DSS = 400V (Min)

    ## Description

    ️· High Voltage
    ️· High-speed power switching

    ## Absolute Maximum Ratings (Ta=25°C)

    SYMBOL PARAMETER VALUE UNIT
    VDSS Drain-Source Voltage 400 V
    VGS Gate-Source Voltage (Continuous) ±20 V
    ID Drain Current (Continuous) 3 A
    PD Total Dissipation @TC=25℃ 80 W
    TJ Max. Operating Junction Temperature 150
    Tstg Storage Temperature -55~150

    ## Electrical Characteristics (TC=25°C unless otherwise specified)

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
    V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA 400 V
    VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 1.0 5.0 V
    RDS(on) Drain-Source On-Resistance VGS=10V; ID=2A 3.0 Ω
    IGSS Gate-Body Leakage Current VGS=±20V; VDS=0 ±100 nA
    IDSS Zero Gate Voltage Drain Current VDS=400V; VGS=0 1 μA
    VSD Forward On-Voltage IS=3A; VGS=0 1.3 V
    tr Rise Time VGS=10V; ID=3A; RL=50Ω 60 90 ns
    ton Turn-on Time 80 120 ns
    tf Fall Time 50 90 ns
    toff Turn-off Time 130 175 ns

    ## Website

    ️· [www.iscsemi.cn](http://www.iscsemi.cn)

    # 2SK610 N-Channel MOSFET Transistor

    ## Features

    ️· Drain Current: ID = 3A @ TC = 25°C
    ️· Drain-Source Voltage: V DSS = 400V (Min)

    ## Description

    ️· High Voltage
    ️· High-speed power switching

    ## Absolute Maximum Ratings (Ta=25°C)

    SYMBOL PARAMETER VALUE UNIT
    VDSS Drain-Source Voltage 400 V
    VGS Gate-Source Voltage (Continuous) ±20 V
    ID Drain Current (Continuous) 3 A
    PD Total Dissipation @TC=25℃ 80 W
    TJ Max. Operating Junction Temperature 150
    Tstg Storage Temperature -55~150

    ## Electrical Characteristics (TC=25°C unless otherwise specified)

    SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
    V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA 400 V
    VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 1.0 5.0 V
    RDS(on) Drain-Source On-Resistance VGS=10V; ID=2A 3.0 Ω
    IGSS Gate-Body Leakage Current VGS=±20V; VDS=0 ±100 nA
    IDSS Zero Gate Voltage Drain Current VDS=400V; VGS=0 1 μA
    VSD Forward On-Voltage IS=3A; VGS=0 1.3 V
    tr Rise Time VGS=10V; ID=3A; RL=50Ω 60 90 ns
    ton Turn-on Time 80 120 ns
    tf Fall Time 50 90 ns
    toff Turn-off Time 130 175 ns

    ## Website

    ️· [www.iscsemi.cn](http://www.iscsemi.cn)

    Part No.2SK610
    ManufacturerISC
    Size64 Kbytes
    Pages2 pages
    DescriptionDrain Source Voltage-: VDSS= 400V(Min)
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