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# Example questions:
➢ What is the typical turn-on time for this mosfet with a 50ω load and a gate voltage of 10v?
➢ What is the maximum continuous drain current this mosfet can handle at 25°c?
➢ How does the drain-source breakdown voltage change with different gate-source voltages?
# 2SK610 N-Channel MOSFET Transistor
## Features
️· Drain Current: ID = 3A @ TC = 25°C
️· Drain-Source Voltage: V DSS = 400V (Min)
## Description
️· High Voltage
️· High-speed power switching
## Absolute Maximum Ratings (Ta=25°C)
| SYMBOL | PARAMETER | VALUE | UNIT |
|---|---|---|---|
| VDSS | Drain-Source Voltage | 400 | V |
| VGS | Gate-Source Voltage (Continuous) | ±20 | V |
| ID | Drain Current (Continuous) | 3 | A |
| PD | Total Dissipation @TC=25℃ | 80 | W |
| TJ | Max. Operating Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55~150 | ℃ |
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0; ID=0.25mA | 400 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS; ID=1mA | 1.0 | 5.0 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS=10V; ID=2A | 3.0 | Ω | ||
| IGSS | Gate-Body Leakage Current | VGS=±20V; VDS=0 | ±100 | nA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=400V; VGS=0 | 1 | μA | ||
| VSD | Forward On-Voltage | IS=3A; VGS=0 | 1.3 | V | ||
| tr | Rise Time | VGS=10V; ID=3A; RL=50Ω | 60 | 90 | ns | |
| ton | Turn-on Time | 80 | 120 | ns | ||
| tf | Fall Time | 50 | 90 | ns | ||
| toff | Turn-off Time | 130 | 175 | ns |
# 2SK610 N-Channel MOSFET Transistor
## Features
️· Drain Current: ID = 3A @ TC = 25°C
️· Drain-Source Voltage: V DSS = 400V (Min)
## Description
️· High Voltage
️· High-speed power switching
## Absolute Maximum Ratings (Ta=25°C)
| SYMBOL | PARAMETER | VALUE | UNIT |
|---|---|---|---|
| VDSS | Drain-Source Voltage | 400 | V |
| VGS | Gate-Source Voltage (Continuous) | ±20 | V |
| ID | Drain Current (Continuous) | 3 | A |
| PD | Total Dissipation @TC=25℃ | 80 | W |
| TJ | Max. Operating Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55~150 | ℃ |
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0; ID=0.25mA | 400 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS; ID=1mA | 1.0 | 5.0 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS=10V; ID=2A | 3.0 | Ω | ||
| IGSS | Gate-Body Leakage Current | VGS=±20V; VDS=0 | ±100 | nA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=400V; VGS=0 | 1 | μA | ||
| VSD | Forward On-Voltage | IS=3A; VGS=0 | 1.3 | V | ||
| tr | Rise Time | VGS=10V; ID=3A; RL=50Ω | 60 | 90 | ns | |
| ton | Turn-on Time | 80 | 120 | ns | ||
| tf | Fall Time | 50 | 90 | ns | ||
| toff | Turn-off Time | 130 | 175 | ns |
| Part No. | 2SK610 |
| Manufacturer | ISC |
| Size | 64 Kbytes |
| Pages | 2 pages |
| Description | Drain Source Voltage-: VDSS= 400V(Min) |
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