HIGH BANDWIDTH SWITCH WITH 20- Datasheet(PDF) - STM5853

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Stanson Technology	STM5853	239Kb/7P	P Channel Mode MOSFET with Schottky
	STS20T10	194Kb/3P	Reliable High Temperature Operation
	STS10T06	174Kb/3P	Reliable High Temperature Operation
	SP6853	642Kb/13P	High-Voltage BiCMOS Process
	ST1638	98Kb/7P	Step-Up DC/DC Converter High Efficiency PFM
	ST6205	296Kb/8P	Low ESR Low Power High-Speed CMOS LDO
	ST002	721Kb/7P	This high-density process is especially tailored to minimize on-state resistance
	STC6332	421Kb/9P	The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
	ST2318SRG	221Kb/7P	ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP4403	321Kb/6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	ST2319SRG	229Kb/8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP9235	331Kb/6P	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9434	314Kb/6P	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STN1810	966Kb/7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb/7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb/6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb/6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb/6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb/6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb/6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

HIGH BANDWIDTH SWITCH WITH 20- Datasheet, PDF

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