8K X 8 BIT HIGH Datasheet(PDF) - CGH60008D

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
WOLFSPEED, INC.	CGH60008D	977Kb/9P	8 W, 6.0 GHz, GaN HEMT Die Rev. 1.2, 2022-11-23
	CAB008A12GM3	2Mb/12P	1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Rev. 1, April 2023
	C3D08065A	1Mb/9P	3rd Generation 650 V, 8 A Silicon Carbide Schottky Rev. 6, March 2023
	CAB008M12GM3	2Mb/12P	1200 V, 8 mΩ, Silicon Carbide, Half-Bridge Module Rev. 2, April 2023
	CG2H40010	1Mb/14P	10 W, DC - 8 GHz, RF Power GaN HEMT Rev. 2.0, 2022-7-7
	C6D08065A	1Mb/9P	6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 1, March 2023
	C4D08120A	1Mb/9P	4th Generation 1200 V, 8 A Silicon Carbide Schottky Diode Rev. 4, March 2023
	C6D08065G	1Mb/6P	6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 0, JULY 2021
	C6D08065Q	679Kb/7P	6th Generation 650 V, 8 A Silicon Carbide Schottky Diode Rev. 0, DECEMBER 2021
	PTGA090304MD	1Mb/12P	Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 – 960 MHz Rev. 04.2, 2022-1-27
	PTMC210404MD	847Kb/8P	Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 – 2200 MHz Rev. 04.1, 2022-1-27
	CAB760M12HM3	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	CAB760M12HM3R	1Mb/11P	1200 V, 760 A, Silicon Carbide High-Performance, Half-Bridge Module Rev. 1, 2022-02-25
	CAS480M12HM3	1Mb/11P	1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2022-02-25
	PTRA082808NF	677Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 – 820 MHz Rev. 06.2, 2022-1-27
	PTVA101K02EV	511Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Rev. 04, 2023-07-07
	PTVA127002EV	691Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Rev. 05, 2023-07-10
	PXAC210552FC	702Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
	CAS120M12BM2	968Kb/11P	1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 1, 2020-11-11
	PTFC270101M	933Kb/22P	High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Rev. 07, 2023-06-28

8K X 8 BIT HIGH Datasheet, PDF

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