NTD5806NT4G datasheet(4/7 Pages) VBSEMI

No. de pieza	NTD5806NT4G

Descripción Electrónicos	N-Channel 4 0-V (D-S) MOSFET

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Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

RDS(on) vs. VGS vs. Temperature

0.

2

0.

4

0.6

0.8

1.

0

1.

2

- 50

- 25

0

25

50

75

100

125

150

175

TJ - Junction Temperature (°C)

VGS = 10 V, ID= 38.8 A

VGS = 4.5 V, ID = 27 A

0.000

0.001

0.002

0.003

0.004

0.005

0246

8

10

VGS - Gate-to-Source Voltage (V)

ID = 38.8 A

TA = 125 °C

TA = 25 °C

Forward Diode Voltage vs. Temperature

Threshold Voltage

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

TJ = 150 °C

0.8

1.2

1.6

2.0

2.4

2.8

- 50 - 25

0

25

50

75

100

125 150

175

TJ - Temperature (°C)

ID = 250 µA

Safe Operating Area, Junction-to-Ambient

0.001

0.01

0.1

1

10

100

1000

0.1

1

10

100

TA = 25 °C

Single Pulse

dc

10 s

1 s

100 ms

10 ms

*Limited by rDS (on)

VDS - Drain-to-Source Voltage (V)

*VGS

minimum VGS at which rDS(on) is specified

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NTD5806NT4G

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