NTD5806NT4G datasheet(5/7 Pages) VBSEMI

No. de pieza	NTD5806NT4G

Descripción Electrónicos	N-Channel 4 0-V (D-S) MOSFET

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Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

50

100

150

200

250

300

0

25

50

75

100

125

150

175

TC - Case Temperature (°C)

Package Limited

Power Derating

0

50

100

150

200

250

300

0

25

50

75

100

125

150

175

C - Case Temperature (°C)

T

Normalized Thermal Transient Impedance, Junction-to-Case

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

10- 4

10- 3

10- 2

10- 1

1

10

0.2

0.1

Duty Cycle = 0.5

Single Pulse

0.05

0.02

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NTD5806NT4G

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NTD5806NT4G Datasheet(PDF) 5 Page - VBsemi Electronics Co.,Ltd

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