NTD5806NT4G datasheet(1/7 Pages) VBSEMI

No. de pieza	NTD5806NT4G

Descripción Electrónicos	N-Channel 4 0-V (D-S) MOSFET

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Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

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N-Channel 4 0-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2011/65/EU

APPLICATIONS

•

OR-ing

•

Server

•DC/DC

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under steady state conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a, e

Qg (Typ)

40

0.01

3 at VGS = 10 V

2 nC

0.01

at VGS = 4.5 V

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

a, e

A

TC = 70 °C

45e

TA = 25 °C

15.8b, c

TA = 70 °C

1

2 b, c

Pulsed Drain Current

IDM

200

Avalanche Current Pulse

L = 0.1 mH

IAS

3

9

Single Pulse Avalanche Energy

EAS

94.8

mJ

Continuous Source-Drain Diode Current

TC = 25 °C

IS

90a, e

A

TA = 25 °C

3.13b, c

Maximum Power Dissipation

TC = 25 °C

PD

100a

W

TC = 70 °C

75

TA = 25 °C

3.75b, c

TA = 70 °C

2.63b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambientb, d

t

 10 sec

RthJA

32

40

°C/W

Maximum Junction-to-Case

Steady State

RthJC

0.5

0.6

5

55

8

TO-252

S

G

D

Top View

D

G

S

N-Channel MOSFET

4

5

4

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E-mail：China@VBsemi TEL:86-755-83251052

NTD5806NT4G

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