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STM32F405 Datasheet(PDF) 139 Page - STMicroelectronics |
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STM32F405 Datasheet(HTML) 139 Page - STMicroelectronics |
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139 / 204 page ![]() DS8626 Rev 9 139/203 STM32F405xx, STM32F407xx Electrical characteristics 5.3.23 VBAT monitoring characteristics 5.3.24 Embedded reference voltage The parameters given in Table 72 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. 5.3.25 DAC electrical characteristics Table 71. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 2 - Er(1) Error on Q –1 - +1 % TS_vbat(2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 72. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint(1) ADC sampling time when reading the internal reference voltage -10 - - µs VRERINT_s(2) Internal reference voltage spread over the temperature range VDD = 3 V - 3 5 mV TCoeff(2) Temperature coefficient - - 30 50 ppm/°C tSTART(2) Startup time - - 6 10 µs 1. Shortest sampling time can be determined in the application by multiple iterations. 2. Guaranteed by design. Table 73. Internal reference voltage calibration values Symbol Parameter Memory address VREFIN_CAL Raw data acquired at temperature of 30 °C, VDDA=3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B Table 74. DAC characteristics Symbol Parameter Min Typ Max Unit Comments VDDA Analog supply voltage 1.8(1) -3.6 V VREF+ Reference supply voltage 1.8(1) -3.6 V VREF+ ≤ VDDA VSSA Ground 0 - 0 V |
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