STM32W108CB datasheet(260/278 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32W108HB STM32W108CC STM32W108CB STM32W108CZ

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Doc ID 16252 Rev 14

14.9

Non-RF system electrical characteristics

Table 66 lists the non-RF system level characteristics for the STM32W.

System wakeup time from deep

sleep

From wakeup event to first

ARM® Cortex-M3 instruction

running from 6MHz internal RC

clock

Includes supply ramp time and

oscillator startup time

Shutdown time going into deep

sleep

From last ARM® Cortex-M3

instruction to deep sleep mode

14.10

RF electrical characteristics

14.10.1

Receive

Table 67 lists the key parameters of the integrated IEEE 802.15.4 receiver on the STM32W.

Note:

Receive measurements were collected with ST’s STM32W Ceramic Balun Reference

Design (Version A0) at 2440 MHz. The Typical number indicates one standard deviation

above the mean, measured at room temperature (25

° C). The Min and Max numbers were

measured over process corners at room temperature

Table 66.

Non-RF system electrical characteristics

Parameter

Conditions

Min.

Typ.

Max.

Unit

–

110

–

µs

–5

–

µs

Table 67.

Receive characteristics

Parameter

Conditions

Min.

Typ.

Max.

Unit

Frequency range

2400

–

2500

MHz

Sensitivity (boost mode)

1% PER, 20 byte packet

defined by IEEE 802.15.4-2003

–

-102

-96

dBm

Sensitivity

1% PER, 20 byte packet

defined by IEEE 802.15.4-2003

–

-100

-94

dBm

High-side adjacent channel

rejection

IEEE 802.15.4 signal at -82

dBm

–35

–

Low-side adjacent channel

rejection

IEEE 802.15.4 signal at -82

dBm

–35

–

2nd high-side adjacent channel

rejection

IEEE 802.15.4 signal at -82

dBm

–46

–

2nd low-side adjacent channel

rejection

IEEE 802.15.4 signal at -82

dBm

–46

–

Channel rejection for all other

channels

IEEE 802.15.4 signal at -82

dBm

–40

–

802.11g rejection centered at +12

MHz or -13 MHz

IEEE 802.15.4 signal at -82

dBm

–36

–

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