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2N2222 Datasheet(PDF) 3 Page - NXP Semiconductors |
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2N2222 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 May 29 3 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltage open base 2N2222 − 30 V 2N2222A − 40 V VEBO emitter-base voltage open collector 2N2222 − 5V 2N2222A − 6V IC collector current (DC) − 800 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW Tcase ≤ 25 °C − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 350 K/W Rth j-c thermal resistance from junction to case 146 K/W |
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