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STM32H7B3II Datasheet(PDF) 114 Page - STMicroelectronics

No. de pieza STM32H7B3II
Descripción Electrónicos  32-bit Arm® Cortex®-M7 280 MHz MCUs, 2-Mbyte flash memory, 1.4-Mbyte RAM, 46 com. and analog interfaces, SMPS, crypto
PDF  238 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7B3II Datasheet(HTML) 114 Page - STMicroelectronics

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6.3.12
Memory characteristics
Flash memory
The characteristics are given at TJ = –40 to 130 °C unless otherwise specified.
The devices are shipped to customers with the flash memory erased.
Table 57. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Word program
-
2.5
4
mA
Sector erase
-
1.8
3
Mass erase
-
2.0
3
Table 58. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
Word program time
128 bits (user area)
-
-
20
µs
16 bits (OTP area)
-
-
20
tERASE8KB
Sector erase time (8 Kbytes)
-
-
-
2.2
ms
tME
Singe-bank mass erase time
-
-
10
Dual-bank mass erase time
-
-
10
Vprog
Programming voltage
1.62
-
3.6
V
1. Guaranteed by characterization results.
Table 59. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
NEND
Endurance
TJ = –40 to +130 °C
10
kcycles
tRET
Data retention
1 kcycle at TA = 85 °C
30
Years
-
10 kcycles at TA = 55 °C
20
1. Guaranteed by characterization results.
STM32H7B3xI
Operating conditions
DS13139 - Rev 8
page 114/238



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