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STM32U535NET6QTR Datasheet(PDF) 169 Page - STMicroelectronics

No. de pieza STM32U535NET6QTR
Descripción Electrónicos  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET6QTR Datasheet(HTML) 169 Page - STMicroelectronics

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IDD(SRAM2)
Supply current to be
added in Standby mode
when full SRAM2 and
BKPSRAM are retained
SMPS
1.8
0.85
2.12
6.70
14.46 29.30
2.60
6.40
21.00 44.00
88.00
µA
2.4
0.77
1.89
5.80
12.53 26.00
2.40
5.70
18.00 38.00
78.00
3.0
0.65
1.58
4.89
10.51 21.90
2.00
4.80
15.00 32.00
66.00
3.3
0.62
1.45
4.48
9.70
20.20
1.90
4.40
14.00 30.00
61.00
3.6
0.57
1.31
3.99
8.90
18.70
1.80
4.00
12.00 27.00
57.00
IDD(SRAM2_8K)
Supply current to be
added in Standby mode
when SRAM2 8-Kbyte
page 1 and BKPSRAM
are retained
1.8
0.29
0.63
1.82
3.86
7.80
0.86
1.90
5.50
12.00
24.00
2.4
0.29
0.63
1.78
3.73
7.80
0.87
1.90
5.40
12.00
24.00
3.0
0.25
0.51
1.47
3.11
6.50
0.76
1.60
4.50
9.40
20.00
3.3
0.24
0.44
1.28
2.80
5.80
0.72
1.40
3.90
8.40
18.00
3.6
0.22
0.36
0.99
2.30
5.00
0.66
1.10
3.00
6.90
15.00
1. Evaluated by characterization. Not tested in production.
2. RTC with default configuration but RTC_CALR.LPCAL = 1.
3. Current consumption with IWDG enabled is similar.
Table 66. Current consumption in Standby mode (continued)
Symbol
Parameter
Conditions
Typ
Max(1)
Unit
-VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
Table 67. Current consumption during wake-up from Standby mode
Symbol
Parameter
Conditions
Typ
Unit
-VDD (V)
25°C
QDD(wakeup from Standby)
Electrical charge consumed during wake-up from
Standby mode
Wake-up clock is MSI 4 MHz
3.0
404
nAs
Wake-up clock is MSI 1 MHz
602



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