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STM32U535NET3QTR Datasheet(PDF) 189 Page - STMicroelectronics

No. de pieza STM32U535NET3QTR
Descripción Electrónicos  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, up to 512 KB flash memory, 274 KB SRAM
PDF  278 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32U535NET3QTR Datasheet(HTML) 189 Page - STMicroelectronics

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DS14217 Rev 1
189/278
STM32U535xx
Electrical characteristics
253
5.3.8
Internal clock timing characteristics
The parameters given in the table below are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 32. The provided curves
are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 80. HSI16 oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 frequency after factory
calibration
VDD = 3.0 V, TJ = 30 °C
15.92
16
16.08
MHz
fHSI16(1)
TJ = –10 °C to 100 °C,
1.58 ≤ VDD ≤ 3.6 V
15.84
-
16.16
TJ = –40 °C to 130 °C,
1.58 ≤ VDD ≤ 3.6 V
15.65
-
16.25
TRIM(2)
HSI16 user trimming step
-
18
29
40
kHz
DuCy(HSI16)(2) Duty cycle
-
45
-
55
%
tsu(HSI16)(2)
HSI16 oscillator startup time
-
-
2.5
3.6
μs
tstab(HSI16)(2)
HSI16 oscillator stabilization time
At 1% of target frequency
-
4
6
IDD(HSI16)(2)
HSI16 oscillator power consumption
-
-
150
210
μA
1. Evaluated by characterization. Not tested in production. It does not take into account package and soldering effects.
2. Specified by design. Not tested in production.



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