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BSW66A Datasheet(PDF) 2 Page - NXP Semiconductors |
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BSW66A Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page ![]() 1997 May 05 2 Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES • High current (max. 1 A) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Industrial applications. DESCRIPTION NPN transistor in a TO-39 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM317 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BSW66A −− 100 V BSW67A −− 120 V BSW68A −− 150 V VCEO collector-emitter voltage open base BSW66A −− 100 V BSW67A −− 120 V BSW68A −− 150 V IC collector current (DC) −− 1A Ptot total power dissipation Tcase ≤ 25 °C −− 5W hFE DC current gain IC = 10 mA; VCE =5V 30 −− IC = 500 mA; VCE =5V 30 −− fT transition frequency IC = 100 mA; VCE = 20 V; f = 100 MHz − 130 − MHz toff turn-off time ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA − 900 − ns |
Número de pieza similar - BSW66A |
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Descripción similar - BSW66A |
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