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FN3544.4

March 13, 2006

Die Characteristics

DIE DIMENSIONS:

83.9 mils x 159 mils x 19 mils

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 7k

Top Metallization:

Type: Al

Thickness: 16k

Substrate:

CMOS, DI

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

HS-0546 - 485

HS-0547 - 485

Metallization Mask Layout

HS-0546RH

HS-0547RH

EN

A1

A0

A3

A2

GND

IN 9

IN 10

IN 11

IN 12

IN 13

IN 14

IN 15

IN 16

IN 1

IN 2

IN 3

IN 4

IN 5

IN 6

IN 7

IN 8

-V

OUT

+V

NC

EN

A1

A0

NC

A2

GND

IN 1B

IN 2B

IN 3B

IN 4B

IN 5B

IN 6B

IN 7B

IN 8B

IN 1A

IN 2A

IN 3A

IN 4A

IN 5A

IN 6A

IN 7A

IN 8A

-V

OUT A

+V

OUT B

HS-0546RH, HS-0547RH