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STM32L452VCU6P Datasheet(PDF) 117 Page - STMicroelectronics |
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STM32L452VCU6P Datasheet(HTML) 117 Page - STMicroelectronics |
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117 / 210 page ![]() IDD_ALL (Shutdown with RTC) Supply current in Shutdown mode (backup registers retained) RTC enabled RTC clocked by LSE bypassed at 32768 Hz 1.8 V 165 275 950 2600 6550 - - - - - nA 2.4 V 235 370 1150 3100 7650 - - - - - 3 V 325 485 1450 3750 9050 - - - - - 3.6 V 445 655 1900 4800 11500 - - - - - RTC clocked by LSE quartz (2) in low drive mode 1.8 V 290 410 1050 2550 6700 - - - - - 2.4 V 375 515 1250 3050 7800 - - - - - 3 V 480 645 1550 3700 8800 - - - - - 3.6 V 625 840 1950 4950 11500 - - - - - IDD_ALL (wakeup from Shutdown) Supply current during wakeup from Shutdown mode Wakeup clock is MSI = 4 MHz. See (3). 3 V 1.00 - - - - - - - - - mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings. Table 49. Current consumption in Shutdown mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit -VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C Table 50. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX(1) Unit -VBAT 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C IDD_VBAT (VBAT) Backup domain supply current RTC disabled 1.8 V 3.00 - - - - - - - - - nA 2.4 V 4.00 - - - - - - - - - 3 V 5.00 - - - - - - - - - 3.6 V 11.0 - - - - - - - - - RTC enabled and clocked by LSE bypassed at 32768 Hz 1.8 V 145 165 285 550 - - - - - - 2.4 V 205 235 370 670 - - - - - - 3 V 285 315 470 820 - - - - - - 3.6 V 375 430 715 1350 - - - - - - 1. Guaranteed by characterization results, unless otherwise specified. |
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