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NTP35N15G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTP35N15G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 7 page  NTP35N15 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 150 − − 240 − − Vdc mV/°C Zero Gate Voltage Collector Current (VGS = 0 Vdc, VDS = 150 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 150 Vdc, TJ = 125°C) IDSS − − − − 5.0 50 mAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS − − ±100 nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) 2.0 − 2.9 −8.56 4.0 − Vdc mV/°C Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 18.5 Adc) (VGS = 10 Vdc, ID = 18.5 Adc, TJ = 125°C) RDS(on) − − 0.042 − 0.050 0.120 W Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 18.5 Adc) VDS(on) − 1.55 1.78 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 18.5 Adc) gFS − 26 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 2275 3200 pF Output Capacitance Coss − 450 650 Reverse Transfer Capacitance Crss − 90 175 SWITCHING CHARACTERISTICS (Notes 2 & 3) Turn−On Delay Time (VDD = 120 Vdc, ID = 37 Adc, VGS = 10 Vdc, RG = 9.1 W) td(on) − 20 35 ns Rise Time tr − 125 225 Turn−Off Delay Time td(off) − 90 175 Fall Time tf − 120 210 Gate Charge (VDS = 120 Vdc, ID = 37 Adc, VGS = 10 Vdc) Qtot − 70 100 nC Qgs − 14 − Qgd − 32 − BODY−DRAIN DIODE RATINGS (Note 2) Forward On−Voltage (IS = 37 Adc, VGS = 0 Vdc) (IS = 37 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 1.00 0.88 1.5 − Vdc Reverse Recovery Time (IS = 37 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr − 170 − ns ta − 112 − tb − 58 − Reverse Recovery Stored Charge QRR − 1.14 − mC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. |
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