NTP35N15G datasheet(3/7 Pages) ONSEMI

No. de pieza	NTP35N15G

Descripción Electrónicos	Power MOSFET Power MOSFET

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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NTP35N15

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3

VGS = 10 V

Figure 1. On−Region Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

70

60

50

40

30

20

10

7

6

5

4

3

2

1

0

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

7

6

5

4

3

2

70

60

50

40

30

20

10

0

Figure 3. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

0.1

0.08

0.06

0.02

50

40

30

20

10

0

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

ID, DRAIN CURRENT (AMPS)

40

30

20

10

0

0.05

0.45

0.40

0.35

0.03

0

0.055

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

2.5

2.25

2.0

1.75

1.5

1.25

1.0

0.75

0.5

150

125

100

75

50

25

0

−25

−50

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

50

40

30

1000

100

10

0.25

0

10,000

Figure 6. Drain−to−Source Leakage Current

versus Voltage

70

60

0.04

70

50

70

60

150

80

89

60

100

90

110 120 130 140

VGS = 4 V

VGS = 4.5 V

VGS = 5 V

VGS = 5.5 V

VGS = 7 V

VGS = 6 V

VGS = 9 V

TJ = 25°C

VGS = 8 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VDS ≥ 10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VDS = 10 V

TJ = 25°C

VGS = 10 V

VGS = 15 V

ID = 18.5 A

VGS = 10 V

TJ = 150°C

VGS = 0 V

TJ = 100°C

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