CF745 datasheet(171/217 Pages) MICROCHIP

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Preliminary

DS30453B-page 171

PIC16C54B/C54C/CR54B/CR54C/C55A/C56A/CR56A/C57C/CR57C/C58B/CR58B

19.0

ELECTRICAL CHARACTERISTICS -

PIC16C54B/C54C/CR54B/CR54C/C55A/C56A/CR56A/C57C/CR57C/C58B/CR

58B

Absolute Maximum Ratings†

Ambient temperature under bias............................................................................................................ –55

°C to +125°C

Storage temperature ............................................................................................................................. –65

°C to +150°C

Voltage on VDD with respect to VSS ..................................................................................................................0 to +7.5V

Voltage on MCLR with respect to VSS................................................................................................................0 to +14V

Voltage on all other pins with respect to VSS ................................................................................. –0.6V to (VDD + 0.6V)

Total power dissipation(1) .....................................................................................................................................800 mW

Max. current out of VSS pin....................................................................................................................................150 mA

Max. current into VDD pin ......................................................................................................................................100 mA

Max. current into an input pin (T0CKI only)

......................................................................................................................±500 µA

Input clamp current, IIK (VI < 0 or VI > VDD)

....................................................................................................................±20 mA

Output clamp current, IOK (VO < 0 or VO > VDD)

..............................................................................................................±20 mA

Max. output current sunk by any I/O pin..................................................................................................................25 mA

Max. output current sourced by any I/O pin ............................................................................................................20 mA

Max. output current sourced by a single I/O Port A ................................................................................................50 mA

Max. output current sourced by a single I/O Port B ................................................................................................50 mA

Max. output current sunk by a single I/OPort A.......................................................................................................50 mA

Max. output current sunk by a single I/O Port B .....................................................................................................50 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)

† NOTICE: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

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