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STM32F446ME Datasheet(PDF) 116 Page - STMicroelectronics |
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STM32F446ME Datasheet(HTML) 116 Page - STMicroelectronics |
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116 / 201 page ![]() Electrical characteristics STM32F446xC/E 116/201 DocID027107 Rev 5 6.3.15 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/JEDEC standard. Static latchup Two complementary static tests are required on six parts to assess the latchup performance: • A supply overvoltage is applied to each power supply pin • A current injection is applied to each input, output and configurable I/O pin Table 52. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/180 MHz SEMI Peak level VDD = 3.3 V, TA = 25 °C, LQFP144 package, conforming to SAE J1752/3 EEMBC, ART ON, all peripheral clocks enabled, clock dithering disabled. 0.1 to 30 MHz 11 dBµV 30 to 130 MHz 10 130 MHz to 1GHz 11 SAE EMI Level 3 - VDD = 3.3 V, TA = 25 °C, LQFP144 package, conforming to SAE J1752/3 EEMBC, ART ON, all peripheral clocks enabled, clock dithering enabled 0.1 to 30 MHz 24 dBµV 30 to 130 MHz 25 130 MHz to 1GHz 20 SAE EMI level 4 - Table 53. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = + 25 °C conforming to ANSI/JEDEC JS-001 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = + 25 °C conforming to ANSI/ESD STM5.3.1, LQFP64, LQFP100, WLCSP81 packages C4 500 TA = + 25 °C conforming to ANSI/ESD STM5.3.1, LQFP144, UFBGA144 (7 x 7), UFBGA144 (10 x 10) packages C3 250 1. Guaranteed based on test during characterization. |
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