5

TCAN330, TCAN332, TCAN334, TCAN337

TCAN330G, TCAN332G, TCAN334G, TCAN337G

www.ti.com

SLLSEQ7D – DECEMBER 2015 – REVISED APRIL 2016

Product Folder Links: TCAN330 TCAN332 TCAN334 TCAN337 TCAN330G TCAN332G TCAN334G TCAN337G

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Copyright © 2015–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential I/O bus voltages, are with respect to ground terminal.

8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

–0.3

5

V

–14

14

V

–0.3

5

V

–0.3

5

V

8

mA

–40

150

°C

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human-body model (HBM), per

All pins except CANH and

CANL

±4000

V

Pins CANH and CANL

±25000

Charged-device model (CDM), per JEDEC

All pins

±1500

IEC 61400-4-2 Contact Discharge

CANH and CANL terminals to

GND

±12000

8.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage

3

3.6

V

Logic terminal HIGH level output current

–2

mA

Logic terminal LOW level output current

2

Operational free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

8.4 Thermal Information

TCAN33x

TCAN33x

UNIT

D (SOIC)

DCN (SOT-23)

8 PINS

8 PINS

Junction-to-ambient thermal resistance

114.4

154.4

°C/W

Junction-to-case (top) thermal resistance

58.7

76.6

°C/W

Junction-to-board thermal resistance

55.2

49.2

°C/W

Junction-to-top characterization parameter

11.7

11.9

°C/W

Junction-to-board characterization parameter

54.6

49.2

°C/W

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

Average power dissipation

STB at 0 V, Input to TXD at 500 kHz, 50% duty cycle

65

65

mW

Thermal shutdown temperature

175

175

°C

Thermal shutdown hysteresis

5

5

°C