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BC857C Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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BC857C Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
1 / 3 page Page:P3-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC856A BC856B BC857A BC857B 3A 3B 3E 3F MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage BC856 V CBO -80 V BC857 V CBO -50 BC858 V CBO -30 Collector-Emitter Voltage BC856 V CEO -65 V BC857 V CEO -45 BC858 V CEO -30 Emitter-Base Voltage V EBO -5 V Collector Current -Continuous I C -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature T J 150 Storage Temperature Tstg -55 to +150 BC857C BC858A BC858B BC858C 3G 3J 3K 3L (PNP) (PNP) (PNP) 1. BASE 2. EMITTER SOT-23 3. COLLECTO BC856A/B BC857A/B/C BC858A/B/C |
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