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BC857C Datasheet(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

No. de pieza BC857C
Descripción Electrónicos  Plastic-Encapsulate Transistors
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Fabricante Electrónico  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Página de inicio  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

BC857C Datasheet(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

  BC857C Datasheet HTML 1Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. BC857C Datasheet HTML 2Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. BC857C Datasheet HTML 3Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.  
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Page:P3-P2
Plastic-Encapsulate Transistors
GUANGDONG
HOTTECH
INDUSTRIAL
CO,. LTD.
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
BC856
BC857
BC858
VCBO
IC= -10μA, IE=0
-80
-50
-30
V
Collector-emitter breakdown voltage BC856
BC857
BC858
VCEO
IC= -10mA, IB=0
-65
-45
-30
V
Emitter-base breakdown voltage
VEBO
IE= -1μA, IC=0
-5
V
Collector cut-off current
BC856
BC857
BC858
ICBO
VCB= -70 V , IE=0
VCB= -45 V , IE=0
VCB= -25 V , IE=0
-0.1
μA
Collector cut-off current
BC856
BC857
BC858
ICEO
VCE= -60 V , IB=0
VCE= -40 V , IB=0
VCE= -25 V , IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5 V , IC=0
-0.1
μA
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
hFE
VCE= -5V, IC= -2mA
125
220
420
250
475
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -100mA, IB= -5mA
-1.1
V
Transition frequency
fT
VCE= -5 V, IC= -10mA
f=100MHz
100
MHz
Collector capacitance
Cob
VCB=-10V,
f=1MHz
4.5
pF
Typical
Characteristics
BC856A/B
BC857A/B/C
BC858A/B/C


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