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STM32F413XG Datasheet(PDF) 119 Page - STMicroelectronics

No. de pieza STM32F413XG
Descripción Electrónicos  ARM-Cortex-M4 32b MCUFPU, 125 DMIPS, up to 1.5MB Flash, 320KB RAM, USB OTG FS, 1 ADC, 2 DACs, 2 DFSDMs
PDF  207 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F413XG Datasheet(HTML) 119 Page - STMicroelectronics

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DocID029162 Rev 2
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STM32F413xG/H
Electrical characteristics
174
Table 52. Flash memory endurance and data retention
Table 51. Flash memory programming with VPP voltage
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-
16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
9.8
-
s
Vprog
Programming voltage
-
2.7
-
3.6
V
VPP
VPP voltage range
-
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
-10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
-
-
1
hour
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
TA = –40 to +125 °C (3 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
1 kcycle(2) at TA = 125 °C
3
10 kcycle(2) at TA = 55 °C
20



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