STM8L151C4 datasheet(109/142 Pages) STMICROELECTRONICS

109 / 142 page

DocID15962 Rev 15

109/142

STM8L151x4/6, STM8L152x4/6

Electrical parameters

115

Sampling time

VAIN on PF0 fast

channel

VDDA < 2.4 V

0.43(4)(5)

µs

VAIN on PF0 fast

channel

2.4 V

≤VDDA≤ 3.6 V

0.22(4)(5)

µs

VAIN on slow channels

VDDA < 2.4 V

0.86(4)(5)

µs

VAIN on slow channels

2.4 V

≤VDDA≤ 3.6 V

0.41(4)(5)

µs

tconv

12-bit conversion time

12 + tS

1/fADC

16 MHz

1(4)

µs

tWKUP

Wakeup time from OFF

state

µs

tIDLE(6)

Time before a new

conversion

TA = +25 °C

1(7)

TA = +70 °C

20(7)

TA = +125 °C

2(7)

tVREFINT

Internal reference

voltage startup time

refer to

Table 46

1. The current consumption through VREF is composed of two parameters:

- one constant (max 300 µA)

- one variable (max 400 µA), only during sampling time + 2 first conversion pulses.

So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at

1Msps

2. VREF- or VDDA must be tied to ground.

3. Guaranteed by design.

4. Minimum sampling and conversion time is reached for maximum Rext = 0.5 k

Ω.

5. Value obtained for continuous conversion on fast channel.

6. The time between 2 conversions, or between ADC ON and the first conversion must be lower than tIDLE.

7. The tIDLE maximum value is ∞on the “Z” revision code of the device.

Table 53. ADC1 characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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