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STM8L151F3 Datasheet(PDF) 102 Page - STMicroelectronics

No. de pieza STM8L151F3
Descripción Electrónicos  Reset and supply management
PDF  122 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8L151F3 Datasheet(HTML) 102 Page - STMicroelectronics

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Electrical parameters
STM8L151x2, STM8L151x3
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DocID018780 Rev 9
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Static latch-up
LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Table 55. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value (1)
1. Guaranteed by characterization results.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
500
Table 56. Electrical sensitivities
Symbol
Parameter
Class
LU
Static latch-up class
II



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