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STM32F302C8 Datasheet(PDF) 117 Page - STMicroelectronics

No. de pieza STM32F302C8
Descripción Electrónicos  Reset and power management
PDF  138 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F302C8 Datasheet(HTML) 117 Page - STMicroelectronics

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STM32F302x6 STM32F302x8
Electrical characteristics
117
6.3.22
Temperature sensor characteristics
6.3.23
VBAT monitoring characteristics
Table 74. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
1. Guaranteed by design.
VSENSE linearity with temperature
-
±1
±2°C
Avg_Slope(1) Average slope
4.0
4.3
4.6
mV/°C
V25
Voltage at 25 °C
1.34
1.43
1.52
V
tSTART(1)
Startup time
4
-
10
µs
TS_temp(1)(2)
2. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the
temperature
2.2
-
-
µs
Table 75. Temperature sensor calibration values
Calibration value name
Description
Memory address
TS_CAL1
TS ADC raw data acquired at
temperature of 30 °C,
VDDA= 3.3 V
0x1FFF F7B8 - 0x1FFF F7B9
TS_CAL2
TS ADC raw data acquired at
temperature of 110 °C
VDDA= 3.3 V
0x1FFF F7C2 - 0x1FFF F7C3
Table 76. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50
-
K
Ω
Q
Ratio on VBAT measurement
-
2
-
Er(1)
1. Guaranteed by design.
Error on Q
-1
-
+1
%
TS_vbat(1)(2)
2. Shortest sampling time can be determined in the application by multiple iterations.
ADC sampling time when reading the VBAT
1mV accuracy
2.2
-
-
µs



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