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STM32F769AI Datasheet(PDF) 159 Page - STMicroelectronics |
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STM32F769AI Datasheet(HTML) 159 Page - STMicroelectronics |
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159 / 255 page ![]() DocID029041 Rev 4 159/255 STM32F765xx STM32F767xx STM32F768Ax STM32F769xx Electrical characteristics 224 5.3.17 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: • Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. • FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 60. They are based on the EMS levels and classes defined in application note AN1709. As a consequence, it is recommended to add a serial resistor (1 k ) located as close as possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm on PCB). Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations The software flowchart must include the management of runaway conditions such as: • Corrupted program counter • Unexpected reset • Critical Data corruption (control registers...) 1. Guaranteed by characterization results. 2. Cycling performed over the whole temperature range. Table 60. EMS characteristics Symbol Parameter Conditions Level/ Class VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD = 3.3 V, TA = +25 °C, fHCLK = 216 MHz, conforms to IEC 61000- 4-2 2B VFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, TA =+25 °C, fHCLK = 168 MHz, conforms to IEC 61000- 4-2 5A |
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