STM32F769II datasheet(133/255 Pages) STMICROELECTRONICS

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STM32F765xx STM32F767xx STM32F768Ax STM32F769xx

Electrical characteristics

224

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.

I/O static current consumption

All the I/Os used as inputs with pull-up generate a current consumption when the pin is

externally held low. The value of this current consumption can be simply computed by using

the pull-up/pull-down resistors values given in Table 65: I/O static characteristics.

For the output pins, any external pull-down or external load must also be considered to

estimate the current consumption.

An additional I/O current consumption is due to I/Os configured as inputs if an intermediate

voltage level is externally applied. This current consumption is caused by the input Schmitt

trigger circuits used to discriminate the input value. Unless this specific configuration is

required by the application, this supply current consumption can be avoided by configuring

these I/Os in analog mode. This is notably the case of ADC input pins which should be

configured as analog inputs.

Table 37. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA =25 °C

TA =85 °C TA =105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT=

3.3 V

VBAT = 3.6 V

IDD_VBAT

Supply current

in VBAT mode

Backup SRAM OFF, RTC and

LSE OFF

0.03

0.04

0.2

0.4

μA

Backup SRAM ON, RTC and

LSE OFF

0.77

0.78

0.83

3.2

7.4

Backup SRAM OFF, RTC ON

and LSE in low drive mode

0.62

0.8

1.13

4.4

10.2

Backup SRAM OFF, RTC ON

and LSE in medium low drive

mode

0.65

0.83

1.17

4.6

10.6

Backup SRAM OFF, RTC ON

and LSE in medium high drive

mode

0.75

0.94

1.28

5.0

11.4

Backup SRAM OFF, RTC ON

and LSE in high drive mode

0.9

1.08

1.43

5.5

12.8

Backup SRAM ON, RTC ON and

LSE in low drive mode

1.35

1.54

1.91

7.3

17.2

Backup SRAM ON, RTC ON and

LSE in Medium low drive mode

1.38

1.57

1.93

7.9

18.4

Backup SRAM ON, RTC ON and

LSE in Medium high drive mode

1.53

1.73

2.11

8.0

18.7

Backup SRAM ON, RTC ON and

LSE in High drive mode

1.67

1.87

2.26

9.0

21.0

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization results.

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