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GD25Q128CXIGX Datasheet(PDF) 62 Page - ELM Electronics |
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GD25Q128CXIGX Datasheet(HTML) 62 Page - ELM Electronics |
62 / 69 page ![]() 62 Rev.1.2 69 - http://www.elm-tech.com GD25Q128CxIGx 3.3V Uniform Sector Dual and Quad Serial Flash 8. ELECTRICAL CHARACTERISTICS 8.1. Power-On Timing Symbol Parameter Min Max Unit tVSL VCC(min) To CS# Low 5 ms tPUW Time Delay Before Write Instruction 5 10 ms VWI Write Inhibit Voltage 1 2.5 V Table 8.1. Power-Up Timing and Write Inhibit Threshold 8.2. Initial Delivery State The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register bits are set to 0, except DRV1 bit (S22) is set to 1. 8.3. Data Retention And Endurance Parameter Test Condition Min Units Minimum Pattern Data Retention Time 150°C 10 Years 125°C 20 Years Erase/Program Endurance -40 to 85°C 100K Cycles Figure 45. Power-on Timing Sequence Diagram |
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