| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Chino-Excel Technology |
CEF01N6G
|
374Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
|
CEF02N6
|
45Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
|
CEF02N6
|
132Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
 CET-MOS Technology Corp... |
CEF02N65A
|
539Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2012.Feb |
|
CEF02N65D
|
350Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2009.July |
|
CEF02N65G
|
599Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 6. 2011.Oct |
 Chino-Excel Technology |
CEF02N6A
|
125Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
 CET-MOS Technology Corp... |
CEF02N6A
|
592Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 3. 2011.Oct |
 Chino-Excel Technology |
CEF02N6G
|
398Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
 CET-MOS Technology Corp... |
CEF02N6G
|
599Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 5. 2011.Feb |
 Chino-Excel Technology |
CEF02N7
|
134Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
|
CEF02N7G
|
403Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
|
 CET-MOS Technology Corp... |
CEF02N7G
|
625Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 3. 2011.Jan |
 SHENZHEN DOINGTER SEMIC... |
CEF02N9
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
 CET-MOS Technology Corp... |
CEF02N9
|
623Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2011.Sep |
|
CEF03N100
|
518Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 1. 2023.Jan |
|
CEF03N8
|
444Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2012.July |
|
CEF04N100
|
497Kb/5P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2019.Sep |
 Chino-Excel Technology |
CEF04N6
|
43Kb/5P |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
 CET-MOS Technology Corp... |
CEF04N6
|
626Kb/4P |
N-Channel Enhancement Mode Field Effect Transistor
Rev 2. 2013.Jan |