# STF817 - STN817 NPN Transistors Summary

Device Overview:

️· Rugged, high-performance NPN transistors.
️· Available in SOT-223 and SOT-89 packages.

Absolute Maximum Ratings:

Parameter	Value (Both Packages)	Unit
Collector-Base Voltage (VCBO)	-120	V
Collector-Emitter Voltage (VCEO)	-80	V
Emitter-Base Voltage (VEBO)	-5	V
Collector Current (IC)	-1.5	A
Collector Peak Current (ICM)	-2	A
Base Current (IB)	-0.3	A
Base Peak Current (IBM)	-0.6	A
Total Dissipation (Ptot)	1.6 (SOT-223), 1.4 (SOT-89)	W
Storage Temperature (Tstg)	-65 to +150	°C
Junction Temperature (Tj)	150	°C

Electrical Characteristics (Tcase = 25°C):

Parameter	Symbol	Min	Typ	Max	Unit
Collector Cut-off Current (VBE = 0)	ICES			-500	µA
Collector Cut-off Current (IB = 0)	ICEO			-1	mA
Emitter Cut-off Current (IC = 0)	IEBO			-100	µA
Collector-Emitter Sustaining Voltage (IB = 0, IC = -10mA)	VCEO(sus)	-80			V
Collector-Emitter Saturation Voltage (IC = -100mA, IB = -10mA)	VCE(sat)			-0.25	V
Collector-Emitter Saturation Voltage (IC = -1A, IB = -100mA)	VCE(sat)			-0.5	V
Base-Emitter Saturation Voltage (IC = -100mA, IB = -10mA)	VBE(sat)			-1	V
Base-Emitter Saturation Voltage (IC = -1A, IB = -100mA)	VBE(sat)			-1.1	V
DC Current Gain (IC = -100mA, VCE = -2V)	hFE	140
DC Current Gain (IC = -500mA, VCE = -2V)	hFE	80
DC Current Gain (IC = -1A, VCE = -2V)	hFE	40
Transition Frequency (IC = -0.1A, VCE = -10V)	fT		50		MHz

Package Dimensions:

️· SOT-223: Detailed dimensional information provided in datasheet.
️· SOT-89: Detailed dimensional information provided in datasheet.