STF817 datasheet(2/5 Pages) STMICROELECTRONICS

No. de pieza	STF817

Descripción Electrónicos	PNP MEDIUM POWER TRANSISTORS

PDF	5 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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2 / 5 page

THERMAL DATA

SOT-223

SOT-89

Rthj-amb

• Thermal Resistance Junction-ambient

Max

oC/W

• Device mounted on a PCB area of 1 cm2.

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = -120 V

-500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = -80 V

-1

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -10 mA

-80

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -100 mA

IB = -10 mA

IC = -1 A

IB = -100 mA

-0.25

-0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -100 mA

IB = -10 mA

IC = -1 A

IB = -100 mA

-1

-1.1

hFE

∗

DC Current Gain

IC = -100 mA

VCE = -2 V

IC = -500 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

140

Transition Frequency

IC = -0.1 A

VCE = -10 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

STF817 - STN817

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