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IRFBC40ASTRL Datasheet with Chat AI
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    • Part No.IRFBC40ASTRL
    ManufacturerVISHAY
    Size342 Kbytes
    Pages8 pages
    DescriptionPower MOSFET
    Datasheet Summary with AI

    # IRFBC40AS, SiHFBC40AS Power MOSFET

    ## Features
    · Low Gate Charge (Qg = 42 nC) for simplified drive.
    · Improved ruggedness (Gate, Avalanche, dV/dt).
    · Fully characterized capacitance & avalanche parameters.
    · Effective Coss specified.
    · Lead (Pb)-free options available.
    · Suitable for SMPS, UPS, and high-speed switching applications.

    ## Product Summary
    · VDS: 600V
    · RDS(on): 1.2 Ω (VGS = 10V)
    · Configuration: Single N-Channel MOSFET
    · Package: D2PAK (TO-263)

    ## Ordering Information
    · Pb-free: IRFBC40ASPbF, IRFBC40ASTRLPbF, IRFBC40ASTRRPbF, SiHFBC40AS-E3, SiHFBC40ASTL-E3, SiHFBC40ASTR-E3
    · SnPb: IRFBC40AS, IRFBC40ASTRL, IRFBC40ASTRR, SiHFBC40AS, SiHFBC40ASTL, SiHFBC40ASTR

    ## Absolute Maximum Ratings
    · Drain-Source Voltage (VDS): 600V
    · Gate-Source Voltage (VGS): ±30V
    · Continuous Drain Current (ID): 6.2A (TC = 25°C), 3.9A (TC = 100°C)
    · Pulsed Drain Current (IDM): 25A
    · Single Pulse Avalanche Energy (EAS): 570mJ
    · Repetitive Avalanche Current (IAR): 6.2A
    · Maximum Power Dissipation (PD): 125W
    · Peak Diode Recovery dV/dt: 6.0 V/ns

    ## Thermal Resistance
    · RthJA: 40°C/W
    · RthJC: 1.0°C/W

    ## Specifications (TJ = 25°C)
    · VDS (breakdown): 600V
    · VGS(th): 2.0 - 4.0V
    · RDS(on): 1.2Ω (VGS = 10V, ID = 3.7A)
    · gfs (Forward Transconductance): 3.4S
    · Ciss (Input Capacitance): 1036 pF
    · Coss (Output Capacitance): 136 pF
    · Qgs (Gate-Source Charge): 10 nC
    · Qgd (Gate-Drain Charge): 20 nC

    # IRFBC40AS, SiHFBC40AS Power MOSFET

    ## Features
    · Low Gate Charge (Qg = 42 nC) for simplified drive.
    · Improved ruggedness (Gate, Avalanche, dV/dt).
    · Fully characterized capacitance & avalanche parameters.
    · Effective Coss specified.
    · Lead (Pb)-free options available.
    · Suitable for SMPS, UPS, and high-speed switching applications.

    ## Product Summary
    · VDS: 600V
    · RDS(on): 1.2 Ω (VGS = 10V)
    · Configuration: Single N-Channel MOSFET
    · Package: D2PAK (TO-263)

    ## Ordering Information
    · Pb-free: IRFBC40ASPbF, IRFBC40ASTRLPbF, IRFBC40ASTRRPbF, SiHFBC40AS-E3, SiHFBC40ASTL-E3, SiHFBC40ASTR-E3
    · SnPb: IRFBC40AS, IRFBC40ASTRL, IRFBC40ASTRR, SiHFBC40AS, SiHFBC40ASTL, SiHFBC40ASTR

    ## Absolute Maximum Ratings
    · Drain-Source Voltage (VDS): 600V
    · Gate-Source Voltage (VGS): ±30V
    · Continuous Drain Current (ID): 6.2A (TC = 25°C), 3.9A (TC = 100°C)
    · Pulsed Drain Current (IDM): 25A
    · Single Pulse Avalanche Energy (EAS): 570mJ
    · Repetitive Avalanche Current (IAR): 6.2A
    · Maximum Power Dissipation (PD): 125W
    · Peak Diode Recovery dV/dt: 6.0 V/ns

    ## Thermal Resistance
    · RthJA: 40°C/W
    · RthJC: 1.0°C/W

    ## Specifications (TJ = 25°C)
    · VDS (breakdown): 600V
    · VGS(th): 2.0 - 4.0V
    · RDS(on): 1.2Ω (VGS = 10V, ID = 3.7A)
    · gfs (Forward Transconductance): 3.4S
    · Ciss (Input Capacitance): 1036 pF
    · Coss (Output Capacitance): 136 pF
    · Qgs (Gate-Source Charge): 10 nC
    · Qgd (Gate-Drain Charge): 20 nC

    Part No.IRFBC40ASTRL
    ManufacturerVISHAY
    Size342 Kbytes
    Pages8 pages
    DescriptionPower MOSFET
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