Document Number: 91113

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFBC40AS, SiHFBC40AS

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Forward

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRFBC40A/SiHFBC40A data and test conditions.

PRODUCT SUMMARY

600

1.2

42

10

20

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRFBC40ASPbF

SiHFBC40AS-E3

SnPb

IRFBC40AS

SiHFBC40AS

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 30

6.2

A

3.9

25

Linear Derating Factor

1.0

W/°C

570

mJ

6.2

A

13

mJ

Maximum Power Dissipation

125

W

dV/dt

6.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply